In the last decade, non-linear dynamical transport in semiconductor superlattices (SLs) has
witnessed significant progress in theoretical descriptions as well as in experimentally …

This paper shows that various models of electron transport in semiconductors that have
been previously proposed in the literature can be connected one with each other by the …

An energy-transport model is rigorously derived from the Boltzmann transport equation of
semiconductors under the hypothesis that the energy gain or loss of the electrons by the …

This paper rst reviews some basic facts about electron transport in semiconductor materials.
Then, it develops several macroscopic models from the di usion approximation of the …

High Field Approximations to a Boltzmann-Poisson System and Boundary Conditions in a
Semiconductor Page 1 Pergamon Appl. Math. Left. Vol. 10, No. 4, pp. Ul-llT, 1997 Copyright©1997 …

The semiconductor Boltzmann equation is considered within a material with a space-
dependent band characteristic. Its fluid limit under strong elastic collisions leads to the so …

We present an asymptotic analysis (with the scaled mean free path as small parameter) of
the spherical-harmonics expansion (SHE-) model for semiconductors in the case of a large …

The semiconductor Boltzmann equation with elastic collisions as the dominating scattering
effects is considered. For the corresponding fluid limit, the spherical harmonics expansion …

We consider a low density approximation to a Boltzmann--Poisson system for electrons in a
semiconductor in regimes where strong forcing balances the collision terms. We compute …

The paper deals with electron transport in a semiconductor of arbitrary band structure and
electron-phonon interaction, subjected to a high, but not necessarily homogeneous, electric …