Silicon wafer solar cells continue to be the leading photovoltaic technology, and in many
places are now providing a substantial portion of electricity generation. Further adoption of …

This paper compares the optical, electronic, physical and chemical properties of dielectric
thin films that are commonly used to enhance the performance of bulk silicon photovoltaic …

Excellent surface passivation of c-Si has been achieved by Al 2 O 3 films prepared by
plasma-assisted atomic layer deposition, yielding effective surface recombination velocities …

Thin Al 2 O 3 films with a thickness of 7–30 nm synthesized by plasma-assisted atomic layer
deposition (ALD) were used for surface passivation of crystalline silicon (c-Si) of different …

Degradation from ultraviolet (UV) radiation has become prevalent in the front of solar cells
due to the introduction of UV‐transmitting encapsulants in photovoltaic (PV) module …

We have analyzed the role of the bond densities of a-SiNx: H films on the passivation
properties at the SiNx: H/Si interface. The films are deposited onto silicon wafers by plasma …

Two different techniques for the electronic surface passivation of silicon solar cells, the
plasma-enhanced chemical vapour deposition of silicon nitride (SiN) and the fabrication of …

In this work, we investigate how the film properties of silicon nitride (SiN x) depend on its
deposition conditions when formed by plasma enhanced chemical vapour deposition …

Bulk and surface passivation by silicon nitride has become an indispensable element in
industrial production of multicrystalline silicon (mc‐Si) solar cells. Microwave PECVD is a …

Using the light-biased microwave-detected photoconductance decay method, injection level
dependent measurements of the effective surface recombination velocity S eff at silicon …