[HTML][HTML] Lattice strain advances thermoelectrics

Y Wu, Z Chen, P Nan, F Xiong, S Lin, X Zhang, Y Chen… - Joule, 2019 - cell.com
Lattice vibrations in crystalline materials generate phonons as heat carriers for heat
conduction, and the phonon dispersion (energy versus momentum) is fundamentally …

Processing and characterization of aluminum nitride ceramics for high thermal conductivity

HM Lee, K Bharathi, DK Kim - Advanced Engineering Materials, 2014 - Wiley Online Library
The effects of sintering additives, microstructure, and morphology of second phase on the
thermal conductivity of aluminum nitride ceramics are discussed in this review. The thermal …

Thermoelectric enhancements in PbTe alloys due to dislocation‐induced strains and converged bands

Y Wu, P Nan, Z Chen, Z Zeng, R Liu, H Dong… - Advanced …, 2020 - Wiley Online Library
In‐grain dislocation‐induced lattice strain fluctuations are recently revealed as an effective
avenue for minimizing the lattice thermal conductivity. This effect could be integratable with …

Defect and stress characterization of AlN films by Raman spectroscopy

V Lughi, DR Clarke - Applied physics letters, 2006 - pubs.aip.org
Raman spectroscopy was used to characterize the residual stress and defect density of AlN
thin films reactively sputtered on silicon (100). The authors studied the correlation between …

Transformation of electron‐beam physical vapor‐deposited 8 wt% yttria‐stabilized zirconia thermal barrier coatings

V Lughi, DR Clarke - Journal of the American Ceramic Society, 2005 - Wiley Online Library
Yttria‐stabilized (8.6 mol% YO1. 5) zirconia thermal barrier coatings evolve at high
temperatures from the “non‐transformable,” metastable tetragonal‐prime phase in their as …

[HTML][HTML] Manipulation of band degeneracy and lattice strain for extraordinary PbTe thermoelectrics

Y Wu, P Nan, Z Chen, Z Zeng, S Lin, X Zhang, H Dong… - Research, 2020 - spj.science.org
Maximizing band degeneracy and minimizing phonon relaxation time are proven to be
successful for advancing thermoelectrics. Alloying with monotellurides has been known to …

A comprehensive study of defects in gallium oxide by density functional theory

MU Jewel, S Hasan, I Ahmad - Computational Materials Science, 2023 - Elsevier
Ultrawide bandgap gallium oxide (Ga 2 O 3) is a promising material for power
semiconductor devices and deep ultraviolet (UV) solar-blind photodetectors. Understanding …

Investigation of semiconductors with defects using Raman scattering

LA Falkovsky - Physics-Uspekhi, 2004 - iopscience.iop.org
The influence of defects and carriers on lattice dynamics, especially on Raman scattering
from semiconductors and metals, is considered; a comparison of the theory with …

[HTML][HTML] Impact of Doping on Cross-Sectional Stress Assessment of 3C-SiC/Si Heteroepitaxy

V Scuderi, M Zielinski, F La Via - Materials, 2023 - mdpi.com
In this paper, we used micro-Raman spectroscopy in cross-section to investigate the effect of
different doping on the distribution of stress in the silicon substrate and the grown 3C-SiC …

Microstructure and electronic properties of microcrystalline silicon carbide thin films prepared by hot-wire CVD

T Chen, F Köhler, A Heidt, Y Huang, F Finger, R Carius - Thin Solid Films, 2011 - Elsevier
An overview on microstructural and electronic properties of stoichiometric microcrystalline
silicon carbide (μc-SiC) prepared by Hot-Wire Chemical Vapor Deposition (HWCVD) at low …