[HTML][HTML] Lattice strain advances thermoelectrics
Y Wu, Z Chen, P Nan, F Xiong, S Lin, X Zhang, Y Chen… - Joule, 2019 - cell.com
Lattice vibrations in crystalline materials generate phonons as heat carriers for heat
conduction, and the phonon dispersion (energy versus momentum) is fundamentally …
conduction, and the phonon dispersion (energy versus momentum) is fundamentally …
Processing and characterization of aluminum nitride ceramics for high thermal conductivity
HM Lee, K Bharathi, DK Kim - Advanced Engineering Materials, 2014 - Wiley Online Library
The effects of sintering additives, microstructure, and morphology of second phase on the
thermal conductivity of aluminum nitride ceramics are discussed in this review. The thermal …
thermal conductivity of aluminum nitride ceramics are discussed in this review. The thermal …
Thermoelectric enhancements in PbTe alloys due to dislocation‐induced strains and converged bands
Y Wu, P Nan, Z Chen, Z Zeng, R Liu, H Dong… - Advanced …, 2020 - Wiley Online Library
In‐grain dislocation‐induced lattice strain fluctuations are recently revealed as an effective
avenue for minimizing the lattice thermal conductivity. This effect could be integratable with …
avenue for minimizing the lattice thermal conductivity. This effect could be integratable with …
Defect and stress characterization of AlN films by Raman spectroscopy
Raman spectroscopy was used to characterize the residual stress and defect density of AlN
thin films reactively sputtered on silicon (100). The authors studied the correlation between …
thin films reactively sputtered on silicon (100). The authors studied the correlation between …
Transformation of electron‐beam physical vapor‐deposited 8 wt% yttria‐stabilized zirconia thermal barrier coatings
Yttria‐stabilized (8.6 mol% YO1. 5) zirconia thermal barrier coatings evolve at high
temperatures from the “non‐transformable,” metastable tetragonal‐prime phase in their as …
temperatures from the “non‐transformable,” metastable tetragonal‐prime phase in their as …
[HTML][HTML] Manipulation of band degeneracy and lattice strain for extraordinary PbTe thermoelectrics
Y Wu, P Nan, Z Chen, Z Zeng, S Lin, X Zhang, H Dong… - Research, 2020 - spj.science.org
Maximizing band degeneracy and minimizing phonon relaxation time are proven to be
successful for advancing thermoelectrics. Alloying with monotellurides has been known to …
successful for advancing thermoelectrics. Alloying with monotellurides has been known to …
A comprehensive study of defects in gallium oxide by density functional theory
Ultrawide bandgap gallium oxide (Ga 2 O 3) is a promising material for power
semiconductor devices and deep ultraviolet (UV) solar-blind photodetectors. Understanding …
semiconductor devices and deep ultraviolet (UV) solar-blind photodetectors. Understanding …
Investigation of semiconductors with defects using Raman scattering
LA Falkovsky - Physics-Uspekhi, 2004 - iopscience.iop.org
The influence of defects and carriers on lattice dynamics, especially on Raman scattering
from semiconductors and metals, is considered; a comparison of the theory with …
from semiconductors and metals, is considered; a comparison of the theory with …
[HTML][HTML] Impact of Doping on Cross-Sectional Stress Assessment of 3C-SiC/Si Heteroepitaxy
In this paper, we used micro-Raman spectroscopy in cross-section to investigate the effect of
different doping on the distribution of stress in the silicon substrate and the grown 3C-SiC …
different doping on the distribution of stress in the silicon substrate and the grown 3C-SiC …
Microstructure and electronic properties of microcrystalline silicon carbide thin films prepared by hot-wire CVD
T Chen, F Köhler, A Heidt, Y Huang, F Finger, R Carius - Thin Solid Films, 2011 - Elsevier
An overview on microstructural and electronic properties of stoichiometric microcrystalline
silicon carbide (μc-SiC) prepared by Hot-Wire Chemical Vapor Deposition (HWCVD) at low …
silicon carbide (μc-SiC) prepared by Hot-Wire Chemical Vapor Deposition (HWCVD) at low …