Improvements in the VLSI industry have always been striving to justify the Moore's law by
implanting, twice count transistors from the existing one. This law has made a significant …

In recent years, much emphasis is given for low power memory design by reducing leakage
power. Carbon nanotube field effect transistor (CNTFET) based static random access …

This paper proposes a novel design of dynamically configurable electrostatic doped double
gate carbon nanotube tunnel FET (ED CN-TFET). The proposed device consists of intrinsic …

This work has proposed a device ie, Dielectric Modulated (DM) Junctionless Transistor
which is utilizes as Label-Free (LF) electrical characteristic detection of bio-molecules. The …

This paper presents the analysis of electrostatic doped Schottky barrier carbon nanotube
FET (ED-SBCNTFET) for low power applications. Electrostatic doping is introduced in …

To go through the phenomenon at nanoscale regimes, circuits using the CNTFETbased on
Ternary Logic have been explored due to their constantly increasing application in high …

The Moore law for scaling of technological nodes has led to the major advancement in chip
design and functionality. With the downscaling of technological nodes, the efficiency of gate …

With advantages such as low sub-threshold swing, low OFF-state current and the ability to
attain a higher ON–OFF ratio, the tunnel CNTFET is one of the most comprehensively …

The scaling down of modern devices beyond 15 nm has faced major setbacks as it
engendered short channel effects which were seemingly inexorable. One of the solutions …

We examine the recent development of ferroelectric memory, along with ferroelectric random
access memory (FRAM). Sophisticated non‐volatile memories including resistive random …