Semiconductor systems and methods may include a semiconductor processing chamber
having a gas box defining an access to the semiconductor processing chamber. The …

Semiconductor systems and methods may include a semi conductor processing chamber
having a gas box defining an access to the semiconductor processing chamber. The cham …

3, 969077 4006047 4, 190488 4.209. 357 4,214,946 4, 232060 4.234. 628 4,265.943
4,340,462 4,341,592 4,361,418 4,364,803 4,368.223 4, 374698 4,381,441 4,397,812 …

Described processing chambers may include a chamber housing at least partially defining
an interior region of the semiconductor processing chamber. The chambers may include a …

An exemplary system may include a chamber configured to contain a semiconductor
substrate in a processing region of the chamber. The system may include a first remote …

Methods of selectively etching tungsten from the surface of a patterned substrate are
described. The etch electrically separates vertically arranged tungsten slabs from one …

A process for generating a compact alumina passivation layer on an aluminum component
includes rinsing the component in deionized water for at least one minute, drying it for at …

A method for conditioning a semiconductor chamber component may include passivating
the chamber component with an oxidizer. The method may also include performing a …

Methods of selectively etching silicon relative to silicon germanium are described. The
methods include a remote plasma etch using plasma effluents formed from a fluorine …

Substrate processing systems are described that have a capacitively coupled plasma (CCP)
unit positioned inside a process chamber. The CCP unit may include a plasma excitation …