Large-signal characterization and behavioral modeling of mm-wave GaN HEMT switches tailored for advanced power amplifier architectures
SU Ghozati, A Baddeley… - 2024 IEEE Topical …, 2024 - ieeexplore.ieee.org
This paper presents a characterization and modeling campaign on high-power microwave
switches based on GaN High Electron Mobility Transistor (HEMT) structures. The large …
switches based on GaN High Electron Mobility Transistor (HEMT) structures. The large …