[HTML][HTML] Non-polar gallium nitride for photodetection applications: A systematic review
O Al-Zuhairi, A Shuhaimi, N Nayan, A Azman… - Coatings, 2022 - mdpi.com
Ultraviolet photodetectors have been widely utilized in several applications, such as
advanced communication, ozone sensing, air purification, flame detection, etc. Gallium …
advanced communication, ozone sensing, air purification, flame detection, etc. Gallium …
Two extreme crystal size scales of diamonds, large single crystal and nanocrystal diamonds: Synthesis, properties and their mutual transformation
Y Wang, W Wang, S Yang, G Shu, B Dai, J Zhu - New Carbon Materials, 2021 - Elsevier
Diamonds with two extreme sizes, large single crystal and nanocrystalline, have completely
different properties, and have aroused the continuous attention of researchers. Each has its …
different properties, and have aroused the continuous attention of researchers. Each has its …
New Charge Carrier Transport‐Assisting Paths in Ultra‐Long GaN Microwire UV Photodetector
GaN‐based materials are the hottest research topic in UV photodetectors (PDs) because of
their low operating voltage, small volume, long lifetime, high‐temperature resistance, and …
their low operating voltage, small volume, long lifetime, high‐temperature resistance, and …
Enhanced photoresponsivity in Bi2Se3 decorated GaN nanowall network-based photodetectors
Recently, highly responsive photodetectors which are capable of photodetection in a wide
range of wavelength spectra are in great demand. To fulfil this, photodetectors formed using …
range of wavelength spectra are in great demand. To fulfil this, photodetectors formed using …
Intrasubband-related linear and nonlinear optical absorption in single, double and triple QW: the compositions, temperature and QW's number effects
This paper exhibits a numerical simulation study of the 1s→ 2p ISB-related linear and
nonlinear optical absorption in single, double, and triple QWs considering the effects of the …
nonlinear optical absorption in single, double, and triple QWs considering the effects of the …
Enhanced photoelectrochemical water splitting performance of GaN nanowires on textured Si (100) platforms: The role of texturing in 3.69% STH conversion efficiency
F Tariq, A Abdullah, MA Kulkarni, H Thaalbi… - Materials Today …, 2023 - Elsevier
Nanostructured GaN semiconductors, including 0D quantum wells and 1D nanowires
(NWs), as well as 3D nanoporous structures, have the potential to enhance the efficiency of …
(NWs), as well as 3D nanoporous structures, have the potential to enhance the efficiency of …
Correlation of crystalline and optical properties with UV photodetector characteristics of GaN grown by laser molecular beam epitaxy on a-sapphire
We have studied the crystalline, optical and photo-response properties of epitaxial GaN films
grown on bare-and pre-nitridated a-sapphire substrates with different thicknesses of low …
grown on bare-and pre-nitridated a-sapphire substrates with different thicknesses of low …
Epitaxial Growth of the Large-Scale, Highly-Ordered 3D GaN-Truncated Pyramid Array Toward an Ultrahigh Rejection Ratio and Responsivity Visible-Blind Ultraviolet …
W Song, Y Sun, X He, S Li - ACS Applied Materials & Interfaces, 2024 - ACS Publications
The micro-and nanostructures of III-nitride semiconductors captivate strong interest owing to
their distinctive properties and myriad potential applications. Nevertheless, challenges …
their distinctive properties and myriad potential applications. Nevertheless, challenges …
Structural and optical properties of sputtered Bi2Se3 thin films on sapphire (0001), quartz and GaN/sapphire (0001)
Abstract Thin films of Bi2Se3 were deposited on various substrates such as sapphire (0001),
quartz, and GaN/sapphire (0001) using magnetron sputtering. The crystalline quality of …
quartz, and GaN/sapphire (0001) using magnetron sputtering. The crystalline quality of …
Fabrication of ultra-violet photodetector on laser MBE grown epitaxial GaN nanowalls on sapphire (11–20)
We have grown epitaxial GaN nanowalls network (NWN) on AlN buffered pre-nitridated
sapphire (11–20) substrate using AlN buffer by laser-assisted molecular beam epitaxy …
sapphire (11–20) substrate using AlN buffer by laser-assisted molecular beam epitaxy …