[HTML][HTML] Non-polar gallium nitride for photodetection applications: A systematic review

O Al-Zuhairi, A Shuhaimi, N Nayan, A Azman… - Coatings, 2022 - mdpi.com
Ultraviolet photodetectors have been widely utilized in several applications, such as
advanced communication, ozone sensing, air purification, flame detection, etc. Gallium …

Two extreme crystal size scales of diamonds, large single crystal and nanocrystal diamonds: Synthesis, properties and their mutual transformation

Y Wang, W Wang, S Yang, G Shu, B Dai, J Zhu - New Carbon Materials, 2021 - Elsevier
Diamonds with two extreme sizes, large single crystal and nanocrystalline, have completely
different properties, and have aroused the continuous attention of researchers. Each has its …

New Charge Carrier Transport‐Assisting Paths in Ultra‐Long GaN Microwire UV Photodetector

DY Um, B Chandran, JY Kim, JK Oh… - Advanced Functional …, 2023 - Wiley Online Library
GaN‐based materials are the hottest research topic in UV photodetectors (PDs) because of
their low operating voltage, small volume, long lifetime, high‐temperature resistance, and …

Enhanced photoresponsivity in Bi2Se3 decorated GaN nanowall network-based photodetectors

V Aggarwal, S Gautam, A Yadav, R Kumar… - Materials Research …, 2024 - Elsevier
Recently, highly responsive photodetectors which are capable of photodetection in a wide
range of wavelength spectra are in great demand. To fulfil this, photodetectors formed using …

Intrasubband-related linear and nonlinear optical absorption in single, double and triple QW: the compositions, temperature and QW's number effects

R En-nadir, H El-ghazi, W Belaid, M Tihtih… - Philosophical …, 2023 - Taylor & Francis
This paper exhibits a numerical simulation study of the 1s→ 2p ISB-related linear and
nonlinear optical absorption in single, double, and triple QWs considering the effects of the …

Enhanced photoelectrochemical water splitting performance of GaN nanowires on textured Si (100) platforms: The role of texturing in 3.69% STH conversion efficiency

F Tariq, A Abdullah, MA Kulkarni, H Thaalbi… - Materials Today …, 2023 - Elsevier
Nanostructured GaN semiconductors, including 0D quantum wells and 1D nanowires
(NWs), as well as 3D nanoporous structures, have the potential to enhance the efficiency of …

Correlation of crystalline and optical properties with UV photodetector characteristics of GaN grown by laser molecular beam epitaxy on a-sapphire

V Aggarwal, C Ramesh, U Varshney, P Tyagi… - Applied Physics A, 2022 - Springer
We have studied the crystalline, optical and photo-response properties of epitaxial GaN films
grown on bare-and pre-nitridated a-sapphire substrates with different thicknesses of low …

Epitaxial Growth of the Large-Scale, Highly-Ordered 3D GaN-Truncated Pyramid Array Toward an Ultrahigh Rejection Ratio and Responsivity Visible-Blind Ultraviolet …

W Song, Y Sun, X He, S Li - ACS Applied Materials & Interfaces, 2024 - ACS Publications
The micro-and nanostructures of III-nitride semiconductors captivate strong interest owing to
their distinctive properties and myriad potential applications. Nevertheless, challenges …

Structural and optical properties of sputtered Bi2Se3 thin films on sapphire (0001), quartz and GaN/sapphire (0001)

S Gautam, V Aggarwal, B Singh, R Kumar… - Journal of Materials …, 2023 - Springer
Abstract Thin films of Bi2Se3 were deposited on various substrates such as sapphire (0001),
quartz, and GaN/sapphire (0001) using magnetron sputtering. The crystalline quality of …

Fabrication of ultra-violet photodetector on laser MBE grown epitaxial GaN nanowalls on sapphire (11–20)

V Aggarwal, S Gautam, U Varshney… - Journal of Materials …, 2023 - Springer
We have grown epitaxial GaN nanowalls network (NWN) on AlN buffered pre-nitridated
sapphire (11–20) substrate using AlN buffer by laser-assisted molecular beam epitaxy …