Characteristics of metal–ferroelectric–insulator–semiconductor structure using a Nd-doped Bi4Ti3O12 ferroelectric layer
CH Yang, Z Wang, JF Hu, YG Yang, X Zhang… - Journal of crystal …, 2004 - Elsevier
The metal–ferroelectric–insulator–semiconductor (MFIS) structure has been fabricated using
Bi3. 54Nd0. 46Ti3O12 (BNdT) as a ferroelectric layer. The BNdT films can crystallize well at …
Bi3. 54Nd0. 46Ti3O12 (BNdT) as a ferroelectric layer. The BNdT films can crystallize well at …
Highly oriented Nb-doped lead titanate thin films by reactive sputtering: Fabrication and structure analyses
RCI Matsushige - Japanese journal of applied physics, 1998 - iopscience.iop.org
Highly oriented lead titanate thin films have been deposited on bare (100) MgO substrates
and on (100) Pt/(100) MgO substrates by reactive sputtering. By adding metallic niobium …
and on (100) Pt/(100) MgO substrates by reactive sputtering. By adding metallic niobium …
Highly oriented Nb-doped lead titanate thin films by reactive sputtering: Electrical properties
RCI Matsushige - Japanese journal of applied physics, 1998 - iopscience.iop.org
Some electrical properties of niobium-doped highly (001)-oriented lead titanate thin films
epitaxially grown on (100) Pt/(100) MgO substrates by reactive sputtering have been …
epitaxially grown on (100) Pt/(100) MgO substrates by reactive sputtering have been …
(Pb, Sm)TiO3 THIN FILMS PREPARED BY CHEMICAL SOLUTION DEPOSITION USING A Bi2Ti2O7 BUFFER LAYER
C Yang, Z Wang, X Cheng, H Li, J Han… - Surface Review and …, 2004 - World Scientific
A thin-film bilayer structure consisting of polycrystalline Pb 0.85 Sm 0.1 TiO 3 and
preferentially (111)-oriented Bi 2 Ti 2 O 7 were prepared using the chemical solution …
preferentially (111)-oriented Bi 2 Ti 2 O 7 were prepared using the chemical solution …