Process validation test of CNTFET using Stanford model
H Sarbazi, R Sabbaghi-Nadooshan… - International Journal of …, 2022 - Taylor & Francis
Process validation test (PVT) helps to predict the response of a device to various figure of
merit (FOM) parameters, such as diameter (process), supply voltage, and temperature. In …
merit (FOM) parameters, such as diameter (process), supply voltage, and temperature. In …
A Compact Model for Carbon Nanotube Field Effect Transistors Incorporating Temperature Effects and Application for Operational Amplifier Design
Y Zou, H Liu, Y Liu, M Yin, W Zhang… - ECS Journal of Solid …, 2024 - iopscience.iop.org
Semiconducting carbon nanotubes (CNTs), characterized by high carrier mobility and
atomic thickness, are considered ideal channel materials for building high-performance and …
atomic thickness, are considered ideal channel materials for building high-performance and …
PVT variations of a behaviorally modeled single walled carbon nanotube field-effect transistor (SW-CNTFET)
KR Agrawal, R Sonkusare - 2015 International Conference on …, 2015 - ieeexplore.ieee.org
MOSFET concepts have been known since many years but its utilization became prominent
in 1960s. Later, device scaling became evitable because in the year 1965 Intel's co-founder …
in 1960s. Later, device scaling became evitable because in the year 1965 Intel's co-founder …
Temperature dependence of carrier transport and electrical characteristics of Schottky‐barrier carbon nanotube field effect transistors
M Ossaimee, M El Sabbagh, S Gamal - Micro & Nano Letters, 2016 - Wiley Online Library
Temperature dependence of the characteristics of a Schottky‐barrier carbon nanotube field
effect transistor has been investigated in detail. This study was performed using two …
effect transistor has been investigated in detail. This study was performed using two …
Temperature-dependent Electrical Characterization of Single and Dual-gate Flexible Carbon Nanotube Thin Film Transistors
MC Chandrashekhar… - IETE Journal of …, 2022 - Taylor & Francis
Dual-gate carbon nanotube thin film transistors (CNTTFTs) with hafnium dioxide (HfO2) and
silicon dioxide (SiO2) as gate dielectrics and single-gate CNTTFTs of two types both of …
silicon dioxide (SiO2) as gate dielectrics and single-gate CNTTFTs of two types both of …
A comprehensive analytical study of electrical properties of carbon nanotube field‐effect transistor for future nanotechnology
AK Singh, B Naresh Kumar… - … Journal of Numerical …, 2018 - Wiley Online Library
This paper discusses a comprehensive analytical study of electrical properties of single‐wall
conventional carbon nanotube field‐effect transistor (CNTFET) devices of subthreshold …
conventional carbon nanotube field‐effect transistor (CNTFET) devices of subthreshold …
[PDF][PDF] Feldeffekttransistoren auf Basis von Kohlenstoffnanoröhrchen: Vergleich zwischen atomistischer Simulation und Bauelementesimulation
BSF Fuchs - 2014 - core.ac.uk
Feldeffekttransistoren auf Basis von Kohlenstoffnanoröhrchen: Vergleich zwischen
atomistischer Simulation und Bauelementesimula Page 1 Fakultät für Naturwissenschaften …
atomistischer Simulation und Bauelementesimula Page 1 Fakultät für Naturwissenschaften …