With the fast development of the fifth-generation cellular network technology (5G), the future
sensors and microelectromechanical systems (MEMS)/nanoelectromechanical systems …

We investigate the inductively coupled plasma (ICP) etching characteristics of (0002)
Aluminum Nitride (AlN) and Aluminum Scandium Nitride (Al 0.94 Sc 0.06 N) piezoelectric …

In the past few decades, silicon photonics with complementary metal-oxide-semiconductor
(CMOS) process compatibility has been well developed and successfully applied to …

This article presents the lamb wave contour mode resonators (CMRs) based on 22%
aluminum scandium nitride (AlScN) thin film with of 12–24, and operating in mode. We …

A zero-power wakeup scheme for energy-efficient sensor applications is presented in this
study based on a piezoelectric MEMS energy harvester featuring wafer-level-integrated …

This paper shows a high sensitivity (12.6 V/Pa), tunable, and zero-power microphone for use
in a near zero power detection system. The microphone uses energy from incoming sound …

We describe an aluminum nitride (AlN)-based resonant switch for use in a near zero power
radio frequency (RF) wake-up receiver. A folded beam structure with a slot compensates for …

We demonstrate the optimized design of Al 0.8 Sc 0.2 N-based S 1 Lamb wave resonators.
The S 1 mode shows a phase velocity of over 20,000 m/s, and an electromechanical …

We present the inductively coupled plasma (ICP) etching characteristics of (0002) oriented
Aluminum Nitride (AlN) and Aluminum Scandium Nitride (Al 0.94 Sc 0.06 N) piezoelectric …

This paper reports on quality factor investigations of high-performance 50 MHz X-cut Lithium
Niobate (LN) Laterally Vibrating Resonators (LVR). The effects of resonators' topology on …