Positron annihilation in semiconductors: defect studies
R Krause-Rehberg, HS Leipner - 1999 - books.google.com
The subject of this book is the investigation of lattice imperfections in semiconductors by
means of positron annihilation. A comprehensive review is given of the different positron …
means of positron annihilation. A comprehensive review is given of the different positron …
Passively modelocked surface-emitting semiconductor lasers
U Keller, AC Tropper - Physics Reports, 2006 - Elsevier
This paper will review and discuss pico-and femtosecond pulse generation from passively
modelocked vertical–external-cavity surface-emitting semiconductor lasers (VECSELs). We …
modelocked vertical–external-cavity surface-emitting semiconductor lasers (VECSELs). We …
Variation of lattice constant and cluster formation in GaAsBi
We investigate the structural properties of GaAsBi layers grown by molecular beam epitaxy
on GaAs at substrate temperatures between 220–315 C. Irrespective of the growth …
on GaAs at substrate temperatures between 220–315 C. Irrespective of the growth …
Carrier dynamics in Beryllium doped low-temperature-grown InGaAs/InAlAs
B Globisch, RJB Dietz, D Stanze, T Göbel… - Applied Physics …, 2014 - pubs.aip.org
The electron and hole dynamics in low-temperature-grown InGaAs/InAlAs multiple quantum
well structures are studied by optical pump-probe transmission measurements for Beryllium …
well structures are studied by optical pump-probe transmission measurements for Beryllium …
Observation of defect complexes containing Ga vacancies in GaAsN
J Toivonen, T Hakkarainen, M Sopanen… - Applied Physics …, 2003 - pubs.aip.org
Positron annihilation spectroscopy was used to study GaAsN/GaAs epilayers. GaAsN layers
were found to contain Ga vacancies in defect complexes. The density of the vacancy …
were found to contain Ga vacancies in defect complexes. The density of the vacancy …
Free-carrier dynamics in low-temperature-grown GaAs at high excitation densities investigated by time-domain terahertz spectroscopy
We investigate the dynamics of the high-frequency conductivity of optically excited low-
temperature-grown GaAs (LT-GaAs)—a material widely used for photoconductive switching …
temperature-grown GaAs (LT-GaAs)—a material widely used for photoconductive switching …
[HTML][HTML] Terahertz detectors from Be-doped low-temperature grown InGaAs/InAlAs: Interplay of annealing and terahertz performance
The influence of post-growth annealing on the electrical properties, the transient carrier
dynamics and the performance as THz photoconductive receiver of Beryllium (Be) doped …
dynamics and the performance as THz photoconductive receiver of Beryllium (Be) doped …
[HTML][HTML] Low bandgap GaAsNBi solar cells
The development of low bandgap GaAsNBi solar cells grown using MBE is reported. The
devices include a pin heterostructure with GaAsNBi as the i-layer. The substrate rotation is …
devices include a pin heterostructure with GaAsNBi as the i-layer. The substrate rotation is …
chapter 1 III-V ferromagnetic semiconductors
Publisher Summary Modem information technology utilizes the charge degree of freedom of
electrons in semiconductors to process the information and the spin degree of freedom in …
electrons in semiconductors to process the information and the spin degree of freedom in …
A thermodynamic analysis of native point defect and dopant solubilities in zinc-blende III–V semiconductors
DTJ Hurle - Journal of Applied Physics, 2010 - pubs.aip.org
A thermodynamic model is used to analyze available experimental data relevant to point
defects in the binary zinc-blende III–V compounds (Ga, In)-(P, As, Sb). The important point …
defects in the binary zinc-blende III–V compounds (Ga, In)-(P, As, Sb). The important point …