State of the art and future perspectives in advanced CMOS technology
The international technology roadmap of semiconductors (ITRS) is approaching the
historical end point and we observe that the semiconductor industry is driving …
historical end point and we observe that the semiconductor industry is driving …
Synthesis of wafer‐scale graphene with chemical vapor deposition for electronic device applications
The first isolation of graphene opens the avenue for new platforms for physics, electronic
engineering, and materials sciences. Among several kinds of synthesis approaches …
engineering, and materials sciences. Among several kinds of synthesis approaches …
[HTML][HTML] Opportunities and challenges of 2D materials in back-end-of-line interconnect scaling
As the challenges in continued scaling of the integrated circuit technology escalate every
generation, there is an urgent need to find viable solutions for both the front-end-of-line …
generation, there is an urgent need to find viable solutions for both the front-end-of-line …
Toward the commercialization of chemical vapor deposition graphene films
Since its first successful isolation over a decade ago, academic and industrial interest has
triggered the steady progress of the commercialization of graphene, as evidenced by a …
triggered the steady progress of the commercialization of graphene, as evidenced by a …
Topological metal MoP nanowire for interconnect
The increasing resistance of copper (Cu) interconnects for decreasing dimensions is a major
challenge in continued downscaling of integrated circuits beyond the 7 nm technology node …
challenge in continued downscaling of integrated circuits beyond the 7 nm technology node …
[HTML][HTML] Electromigration failure mechanisms of< 1 1 1>-oriented nanotwinned Cu redistribution lines with polyimide capping
IH Tseng, PN Hsu, TL Lu, KN Tu, C Chen - Results in Physics, 2021 - Elsevier
Electromigration (EM) mechanisms are well studied in damascene copper lines capped with
inorganic dielectrics. However, EM in Cu redistribution lines (RDLs) capped by organic …
inorganic dielectrics. However, EM in Cu redistribution lines (RDLs) capped by organic …
[HTML][HTML] Enhancement of electromigration lifetime of copper lines by eliminating nanoscale grains in highly< 111>-oriented nanotwinned structures
In this study, we designed and electroplated various regular and nanotwinned copper (nt-
Cu) lines. These Cu lines were then covered with a polyimide (PI) layer and heat-treated to …
Cu) lines. These Cu lines were then covered with a polyimide (PI) layer and heat-treated to …
Mini-review: Modeling and performance analysis of nanocarbon interconnects
As the interconnect delay exceeds the gate delay, the integrated circuit (IC) technology has
evolved from a transistor-centric era to an interconnect-centric era. Conventional metallic …
evolved from a transistor-centric era to an interconnect-centric era. Conventional metallic …
The connection between electromigration resistance and thin-film adhesion and their degradation with temperature
SP Prasad, Y Singh, PK Vaitheeswaran… - IEEE Transactions …, 2023 - ieeexplore.ieee.org
Growth of voids driven by electromigration in current carrying metal thin films is a common
mode of failure in microelectronic devices. Studies have shown that electromigration-driven …
mode of failure in microelectronic devices. Studies have shown that electromigration-driven …
High-speed interconnects: history, evolution, and the road ahead
An integrated circuit (IC), or chip, is a set of electronic circuits and components placed on a
tiny planar silicon (Si) semiconductor substrate. These electronics circuits and components …
tiny planar silicon (Si) semiconductor substrate. These electronics circuits and components …