" Type-II" InP/GaAsSb DHBTs are the first non-GaInAs-based transistors to show oscillation
frequencies> 1 THz with the associated benefits of higher breakdown voltages, low power …

This paper describes a novel heterojunction bipolar transistor (HBT) structure, the collector-
up tunneling-collector HBT (C-up TC-HBT), that minimizes the offset voltage V/sub CE …

The kink phenomenon in heterojunction bipolar transistors (HBTs) is introduced and
mathematically analyzed. A novel composite transistor based on feedback theory is …

AlGaAs/GaAs/GaAs and GaInP/GaAs/GaAs npn heterojunction bipolar transistors (HBTs)
are now in widespread use in microwave power amplifiers. In this paper, improved HBT …

At high current densities, the onset of the Kirk effect is often the main frequency and power
constraint in bipolar transistors. In this paper, we present an analytical model that accurately …

Temperature dependence of electron impact ionization in InGaP-GaAs-InGaP double
heterojunction bipolar transistors (DHBTs) were comprehensively studied in the temperature …

In this paper, thermal stability in the multifinger GaInP/GaAs collector-up tunneling-collector
heterojunction bipolar transistors (C-up TC-HBTs) has been investigated. Two unique …

The electron saturation velocity in Ga 0.52 In 0.48 P has been measured as a function of
temperature, utilizing the Kirk effect in double heterojunction bipolar transistors. An AlGaAs …

Novel device structures using GaInNP in a thin layer at the base-collector (BC) junction of a
heterojunction bipolar transistor (HBT) are described. The proposed devices, blocked hole …

Electron impact ionization coefficients (/spl alpha/) in In/sub 0.52/Ga/sub 0.48/P have been
extracted based on the measurements of electron multiplication factor in npn InGaP-GaAs …