Gallium nitride (GaN) and its allied binaries InN and AIN as well as their ternary compounds
have gained an unprecedented attention due to their wide-ranging applications …

We report a new and general strategy for efficient injection of carriers in active nanophotonic
devices involving the synthesis of well-defined doped core/shell/shell (CSS) nanowire …

Single-crystal n-type GaN nanowires have been grown epitaxially on a Mg-doped p-type
GaN substrate. Piezoelectric nanognerators based on GaN nanowires are investigated by …

A one-pot microwave-assisted hydrothermal approach was developed to quickly synthesize
organosilane-functionalized carbon dots (Si-CDs) within 5 minutes. With the assistance of N …

We have investigated the dependence of impurity incorporation on the polar direction of
GaN growth by using secondary ion mass spectroscopy (SIMS). GaN films were deposited …

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The influence of ion-beam-produced lattice defects as well as H, B, C, N, O, and Si,
introduced by ion implantation, on the luminescence properties of wurtzite GaN is studied by …

The deep levels in GaN associated with yellow luminescence transitions have been
investigated using photoluminescence, Hall measurements, and deep level transient …

We investigate the origin of yellow luminescence in n-type GaN. It is found that the relative
intensity of yellow luminescence increases as the full width at half maximum of the x-ray …

Photoluminescence and Raman scattering spectra from AlN nanocrystalline powders are
studied. A blue emission band centered at 420nm (2.95 eV) is observed. This band may be …