With the scaling of lateral dimensions in advanced transistors, an increased gate
capacitance is desirable both to retain the control of the gate electrode over the channel and …

The critical size limit of voltage-switchable electric dipoles has extensive implications for
energy-efficient electronics, underlying the importance of ferroelectric order stabilized at …

An L-shaped tunnel FET (TFET), which features band-to-band tunneling (BTBT)
perpendicular to the channel direction, is experimentally demonstrated for the first time. It is …

Purpose of review Injuries to the great toe are common in athletes. While most are managed
nonoperatively and allow return to sports activity, some great toe injuries are highly …

In capacitance-voltage (CV) measurements, frequency dispersion in high-k dielectrics is
often observed. The frequency dependence of the dielectric constant (k-value), that is the …

Ultrathin silicon dioxide (SiO 2) layers with excellent electrical characteristics can be formed
using the nitric acid oxidation of Si (NAOS) method, ie, by immersion of Si in nitric acid (HNO …

SrTiO 3 has been grown epitaxially by molecular beam epitaxy on Si. The capacitance of
this 110 Å dielectric film is electrically equivalent to less than 10 Å of SiO 2. This structure …

The development of high-performance graphene-based nanoelectronics requires the
integration of ultrathin and pinhole-free high-k dielectric films with graphene at the wafer …

High-k metal oxide gate dielectrics may be required to extend Moore's law of semiconductor
device density scaling into the future. However, growth of a thin SiO 2-containing interface …

Effective interface trap characterization approaches are indispensable in the development of
gate stack and dielectric surface passivation technologies in III-nitride (III-N) insulated-gate …