The dawn of Ga2O3 HEMTs for high power electronics-A review
Recently, there is a growing interest in Gallium Oxide (Ga 2 O 3) as a promising
semiconductor material for intended applications in RF, power electronics, and sensors with …
semiconductor material for intended applications in RF, power electronics, and sensors with …
N-polar GaN epitaxy and high electron mobility transistors
This paper reviews the progress of N-polar ($000\mathop 1\limits^\_ $) GaN high frequency
electronics that aims at addressing the device scaling challenges faced by GaN high …
electronics that aims at addressing the device scaling challenges faced by GaN high …
GaN-based power devices: Physics, reliability, and perspectives
Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …
fabrication of power devices. Among the semiconductors for which power devices are …
Development of GaN HEMTs fabricated on silicon, silicon-on-insulator, and engineered substrates and the heterogeneous integration
LH Hsu, YY Lai, PT Tu, C Langpoklakpam, YT Chang… - Micromachines, 2021 - mdpi.com
GaN HEMT has attracted a lot of attention in recent years owing to its wide applications from
the high-frequency power amplifier to the high voltage devices used in power electronic …
the high-frequency power amplifier to the high voltage devices used in power electronic …
[HTML][HTML] Interplay between counter-surface chemistry and mechanical activation in mechanochemical removal of N-faced GaN surface in humid ambient
Mechanical activation in mechanical removal of GaN using diamond tip and
mechanochemical removal using Al 2 O 3 tip are described by the Archard equation and …
mechanochemical removal using Al 2 O 3 tip are described by the Archard equation and …
Barrier-layer optimization for enhanced GaN-on-diamond device cooling
GaN-on-diamond device cooling can be enhanced by reducing the effective thermal
boundary resistance (TBReff) of the GaN/diamond interface. The thermal properties of this …
boundary resistance (TBReff) of the GaN/diamond interface. The thermal properties of this …
Using both faces of polar semiconductor wafers for functional devices
Unlike non-polar semiconductors such as silicon, the broken inversion symmetry of the wide-
bandgap semiconductor gallium nitride (GaN) leads to a large electronic polarization along …
bandgap semiconductor gallium nitride (GaN) leads to a large electronic polarization along …
Influence of the substrate misorientation on the properties of N-polar GaN films grown by metal organic chemical vapor deposition
Smooth, high quality N-polar GaN films were realized by metal organic chemical vapor
deposition (MOCVD) through growth on misoriented (0001) sapphire substrates and the …
deposition (MOCVD) through growth on misoriented (0001) sapphire substrates and the …
N-polar GaN cap MISHEMT with record power density exceeding 6.5 W/mm at 94 GHz
A novel N-Polar GaN cap (MIS) high electron mobility transistor demonstrating record 6.7-
W/mm power density with an associated power-added efficiency of 14.4% at 94 GHz is …
W/mm power density with an associated power-added efficiency of 14.4% at 94 GHz is …
N-polar GaN: Epitaxy, properties, and device applications
Abstract In recent years, Gallium Nitride (GaN) has been established as a material of choice
for high power switching, high power RF and lighting applications. In c-direction, depending …
for high power switching, high power RF and lighting applications. In c-direction, depending …