Al‐Doped ZnO Transistors Processed from Solution at 120° C
A simple Al‐doping method that is used to significantly enhance the operating
characteristics of ZnO thin‐film transistors processed from solution at temperatures down to …
characteristics of ZnO thin‐film transistors processed from solution at temperatures down to …
Low-cost, high-performance spray pyrolysis-grown amorphous zinc tin oxide: The challenge of a complex growth process
A Zhussupbekova, D Caffrey… - … Applied Materials & …, 2020 - ACS Publications
Transparent conductive oxides (TCOs) are important materials for a wide range of
optoelectronic devices. Amorphous zinc tin oxide (a-ZTO) is a TCO and one of the best …
optoelectronic devices. Amorphous zinc tin oxide (a-ZTO) is a TCO and one of the best …
Zn2NF and Related Analogues of ZnO
Substitution of aliovalent N3–and F–anions in place of O2–in ZnO brings about major
changes in the electronic structure and properties, the composition, even with 10 atomic …
changes in the electronic structure and properties, the composition, even with 10 atomic …
UV-induced improvement in ZnO thin film conductivity: a new in situ approach
AT Vai, VL Kuznetsov, JR Dilworth… - Journal of Materials …, 2014 - pubs.rsc.org
We report a long-lasting enhancement in electrical properties occurs when zinc oxide (ZnO)
thin films prepared by spray pyrolysis in a nitrogen atmosphere are treated with UV prior to …
thin films prepared by spray pyrolysis in a nitrogen atmosphere are treated with UV prior to …
The thermovoltaic effect in zinc oxide inhomogeneously doped with mixed-valence impurities
IA Pronin, IA Averin, AS Bozhinov, AT Georgieva… - Technical Physics …, 2015 - Springer
The Thermovoltaic Effect in Zinc Oxide Inhomogeneously Doped with Mixed-Valence Impurities
Page 1 930 ISSN 1063-7850, Technical Physics Letters, 2015, Vol. 41, No. 10, pp. 930–932. © …
Page 1 930 ISSN 1063-7850, Technical Physics Letters, 2015, Vol. 41, No. 10, pp. 930–932. © …
[PDF][PDF] Термовольтаический эффект в оксиде цинка, неоднородно легированном примесями с переменной валентностью
ИА Пронин, ИА Аверин, АС Божинова… - Письма в …, 2015 - researchgate.net
За последние годы одним из самых интересных событий в области
термоэлектричества было открытие возникновения аномальной ЭДС при нагреве …
термоэлектричества было открытие возникновения аномальной ЭДС при нагреве …
Transport mechanisms in Co-doped ZnO (ZCO) and H-irradiated ZCO polycrystalline thin films
In the present study, the electrical resistivity (ρ) as a function of the temperature (T) has been
measured in polycrystalline ZnO, Co-doped ZnO (ZCO) and H irradiated ZCO (HZCO) …
measured in polycrystalline ZnO, Co-doped ZnO (ZCO) and H irradiated ZCO (HZCO) …
Relation between surface and bulk electronic properties of Al doped ZnO films deposited at varying substrate temperature by radio frequency magnetron sputtering
In this study, a qualitative relationship between the surface and bulk electronic states for Al-
doped ZnO (AZO) thin films (thickness< 260 nm) is established. To this end, AZO films were …
doped ZnO (AZO) thin films (thickness< 260 nm) is established. To this end, AZO films were …
Determination of the critical carrier concentration for the metal–insulator transition in Ga-doped ZnO
M Sbeta, T Serin, A Yildiz - Journal of Materials Science: Materials in …, 2018 - Springer
Ga-doped ZnO (GZO) thin films with different Ga contents (1, 2, 4, 3, and 5 at.%) were
successfully deposited on glass substrates using a spin-coating process. The temperature …
successfully deposited on glass substrates using a spin-coating process. The temperature …
[HTML][HTML] Tailoring the electrical and magneto-electric transport properties of ZnO films via Ti ion implantation
A significant development toward semiconductor-based electronic devices is based on the
electric and magneto-electric control of the transport properties of the charge carriers. This …
electric and magneto-electric control of the transport properties of the charge carriers. This …