Subthreshold Schottky-barrier thin-film transistors with ultralow power and high intrinsic gain
The quest for low power becomes highly compelling in newly emerging application areas
related to wearable devices in the Internet of Things. Here, we report on a Schottky-barrier …
related to wearable devices in the Internet of Things. Here, we report on a Schottky-barrier …
A review of novel methods to improve the optical and electrical properties of n-type and p-type sulphides and oxides: leading the frontiers of semiconductor technology
O MADKHALI - Physica Scripta, 2024 - iopscience.iop.org
This review paper focuses on the current advancements in improving the optical and
electrical properties of n-type and p-type oxides and sulphide semiconductors. The demand …
electrical properties of n-type and p-type oxides and sulphide semiconductors. The demand …
Synaptic Plasticity Powering Long‐Afterglow Organic Light‐Emitting Transistors
Long‐lasting luminescence in optoelectronic devices is highly sought after for applications
in optical data storage and display technology. While in light‐emitting diodes this is …
in optical data storage and display technology. While in light‐emitting diodes this is …
Oxygen vacancies effects in a‐IGZO: Formation mechanisms, hysteresis, and negative bias stress effects
A de Jamblinne de Meux, A Bhoolokam… - … status solidi (a), 2017 - Wiley Online Library
The amorphous oxide semiconductor Indium‐Gallium‐Zinc‐Oxide (a‐IGZO) has gained a
large technological relevance as a semiconductor for thin‐film transistors in active‐matrix …
large technological relevance as a semiconductor for thin‐film transistors in active‐matrix …
Defects in amorphous semiconductors: The case of amorphous indium gallium zinc oxide
A de Jamblinne de Meux, G Pourtois, J Genoe… - Physical Review …, 2018 - APS
Based on a rational classification of defects in amorphous materials, we propose a simplified
model to describe intrinsic defects and hydrogen impurities in amorphous indium gallium …
model to describe intrinsic defects and hydrogen impurities in amorphous indium gallium …
Developing subthreshold-swing limit of PEALD In–Sn–Ga–O transistor via atomic-scaled Sn control
DH Lee, DG Kim, M Kim, S Uhm, T Kim… - ACS Applied …, 2022 - ACS Publications
The In–Sn–Ga–O (ITGO) thin-film transistor (TFT) is promising in that it possesses enhanced
electrical characteristics and stability because the tin (Sn) has large spherical s orbitals and …
electrical characteristics and stability because the tin (Sn) has large spherical s orbitals and …
Engineering a subnanometer interface tailoring layer for precise hydrogen incorporation and defect passivation for high-end oxide thin-film transistors
Top-gate self-aligned structured oxide thin-film transistors (TFTs) are suitable for the
backplanes of high-end displays because of their low parasitic capacitances. The gate …
backplanes of high-end displays because of their low parasitic capacitances. The gate …
Total subgap range density of states-based analysis of the effect of oxygen flow rate on the bias stress instabilities in a-IGZO TFTs
GW Yang, J Park, S Choi, C Kim… - … on Electron Devices, 2021 - ieeexplore.ieee.org
In this study, the oxygen flow rate (OFR) dependence of negative bias illumination stress
(NBIS) and positive bias stress (PBS) in amorphous indium-gallium-zinc-oxide (a-IGZO) thin …
(NBIS) and positive bias stress (PBS) in amorphous indium-gallium-zinc-oxide (a-IGZO) thin …
Artificially fabricated subgap states for visible-light absorption in indium–gallium–zinc oxide phototransistor with solution-processed oxide absorption layer
We present a solution-processed oxide absorption layer (SAL) for detecting visible light of
long wavelengths (635 and 532 nm) for indium–gallium–zinc oxide (IGZO) phototransistors …
long wavelengths (635 and 532 nm) for indium–gallium–zinc oxide (IGZO) phototransistors …
Low voltage-driven oxide phototransistors with fast recovery, high signal-to-noise ratio, and high responsivity fabricated via a simple defect-generating process
We have demonstrated that photo-thin film transistors (photo-TFTs) fabricated via a simple
defect-generating process could achieve fast recovery, a high signal to noise (S/N) ratio, and …
defect-generating process could achieve fast recovery, a high signal to noise (S/N) ratio, and …