Semipolar and nonpolar GaN epi-films grown on m-sapphire by plasma assisted molecular beam epitaxy
We hereby report the development of non-polar epi-GaN films of usable quality, on an m-
plane sapphire. Generally, it is difficult to obtain high-quality nonpolar material due to the …
plane sapphire. Generally, it is difficult to obtain high-quality nonpolar material due to the …
Hexagonal boron nitride–graphene heterostructures with enhanced interfacial thermal conductance for thermal management applications
Atomically thin monolayers of graphene show excellent electronic properties which have led
to a great deal of research on their use in nanoscale devices. However, heat management of …
to a great deal of research on their use in nanoscale devices. However, heat management of …
[HTML][HTML] Enhanced UV detection by non-polar epitaxial GaN films
Nonpolar a-GaN (11-20) epilayers were grown on r-plane (1-102) sapphire substrates using
plasma assisted molecular beam epitaxy. High resolution x-ray diffractometer confirmed the …
plasma assisted molecular beam epitaxy. High resolution x-ray diffractometer confirmed the …
Embedded AlN/GaN multi-layer for enhanced crystal quality and surface morphology of semi-polar (11-22) GaN on m-plane sapphire
AZ Omar, A Shuhaimi, AHA Makinudin… - Materials Science in …, 2018 - Elsevier
We demonstrate high quality semi-polar (11-22) gallium nitride thin film grown on m-plane
sapphire substrate with the insertion of AlN/GaN multi-layer via MOCVD. The influence of …
sapphire substrate with the insertion of AlN/GaN multi-layer via MOCVD. The influence of …
Highly Controllable Epitaxial Growth of High-Density Nonpolar GaN Nanorod Arrays
P Li, L Wang, H Chen, N Ji, C Lee, S Sun… - Crystal Growth & …, 2024 - ACS Publications
The undesirable effects of the degraded device performance and shorter lifetime caused by
the polarization electric field induced by polar GaN have contributed to an increasing …
the polarization electric field induced by polar GaN have contributed to an increasing …
First and second order Raman scattering spectroscopy of nonpolar a-plane GaN
Nonpolar a-plane [(11 2 0)] GaN samples have been grown on r-plane [(1 1 02)] sapphire
substrates by low-pressure metal-organic chemical-vapor deposition. The room-temperature …
substrates by low-pressure metal-organic chemical-vapor deposition. The room-temperature …
In-situ Raman study of α-D-glucose under different pressure and temperature
Z Zheng, X Yao, S Zhang, L Fang, Z Jiang - Journal of Molecular Structure, 2023 - Elsevier
High-pressure Raman and infra-red spectroscopies were employed to explore how the
molecular structure of α-D-glucose changes under high pressure and temperature. At room …
molecular structure of α-D-glucose changes under high pressure and temperature. At room …
P-type electrical transport properties and excellent Hall mobility of GaSb single crystal grown by Ga flux
Y Zhao, Y Pan, L Chen, M Cheng, L Liu… - Applied Physics …, 2024 - pubs.aip.org
Semiconductor materials, especial the Gallium antimonide (GaSb), have many unique
properties and potential application, which attracted significant research interest. However …
properties and potential application, which attracted significant research interest. However …
Temperature dependence of Raman scattering from 4H-SiC with hexagonal defects
R Han, B Han, DH Wang, C Li - Applied Physics Letters, 2011 - pubs.aip.org
Noncontact temperature measurements based on Raman scattering were performed on 4H-
SiC with hexagonal defects. These measurements show that the four-phonon process …
SiC with hexagonal defects. These measurements show that the four-phonon process …
Comparative investigation of semipolar (11–22) GaN grown on patterned (113) Si with different V/III ratios via MOCVD
We report on the growth of high-quality semi-polar (11–22) GaN with a smooth surface on a
patterned Si (113) substrate by delicately tuning the V/III ratio in a three-step approach. The …
patterned Si (113) substrate by delicately tuning the V/III ratio in a three-step approach. The …