Strain-induced spin-resonance shifts in silicon devices
In spin-based quantum-information-processing devices, the presence of control and
detection circuitry can change the local environment of a spin by introducing strain and …
detection circuitry can change the local environment of a spin by introducing strain and …
[HTML][HTML] Linearly polarized GHz magnetization dynamics of spin helix modes in the ferrimagnetic insulator Cu2OSeO3
I Stasinopoulos, S Weichselbaumer, A Bauer… - Scientific reports, 2017 - nature.com
Linear dichroism—the polarization dependent absorption of electromagnetic waves—is
routinely exploited in applications as diverse as structure determination of DNA or …
routinely exploited in applications as diverse as structure determination of DNA or …
Electron spin resonance spectroscopy using a Nb superconducting resonator
D Akhmetzyanov, TW Borneman, I Taminiau… - Applied Physics …, 2023 - pubs.aip.org
Recently, micro-resonator structures have demonstrated considerable enhancement of ESR
spectroscopy. The high-quality factor and confined mode of these resonators (cavities) lead …
spectroscopy. The high-quality factor and confined mode of these resonators (cavities) lead …
Machine Learning to Predict Quasi TE₀₁₁ Mode Resonances in Double-Stacked Dielectric Cavities
C Lewis, J Bryan, N Schwartz, J Hale… - IEEE Transactions …, 2022 - ieeexplore.ieee.org
We have applied machine learning in a neural network to calculate the quasi TE 011 mode
of a cylindrical microwave cavity with two symmetrically stacked dielectric resonators (DRs) …
of a cylindrical microwave cavity with two symmetrically stacked dielectric resonators (DRs) …
Microstructure of bismuth centers in silicon before and after irradiation with 15 MeV protons
N Arutyunov, R Krause-Rehberg… - Journal of Physics …, 2021 - iopscience.iop.org
A decrease of two-gamma annihilation rate of a positron in a strong spin–orbit field of the
annihilation site of bismuth impurity center 209 Bi (J= 9/2) in silicon with natural isotope …
annihilation site of bismuth impurity center 209 Bi (J= 9/2) in silicon with natural isotope …
Electrical manipulation of donor spin qubits in silicon and germanium
AJ Sigillito - 2017 - search.proquest.com
Many proposals for quantum information devices rely on electronic or nuclear spins in
semiconductors because of their long coherence times and compatibility with industrial …
semiconductors because of their long coherence times and compatibility with industrial …
[HTML][HTML] Detecting Axial Ratio of Microwave Field with High Resolution Using NV Centers in Diamond
CH Li, DF Li, Y Zheng, FW Sun, AM Du, YS Ge - Sensors, 2019 - mdpi.com
Polarization property characterization of the microwave (MW) field with high speed and
resolution is vitally beneficial as the circularly-polarized MW field plays an important role in …
resolution is vitally beneficial as the circularly-polarized MW field plays an important role in …
Detecting Axial Ratio of Microwave Field with High Resolution Using NV Centers in Diamond
L Cui-Hong, L Deng-Feng, Y Zheng, S Fang-Wen… - Sensors, 2019 - search.proquest.com
Polarization property characterization of the microwave (MW) field with high speed and
resolution is vitally beneficial as the circularly-polarized MW field plays an important role in …
resolution is vitally beneficial as the circularly-polarized MW field plays an important role in …
Development and Characterization of Low-Disorder Metal-Oxide-Silicon Quantum Dot Devices
JS Kim - 2018 - search.proquest.com
Abstract Spins confined in Metal-Oxide-Silicon (MOS) quantum dot devices are promising
qubits in a quantum processor, demonstrating long coherence times, a large valley splitting …
qubits in a quantum processor, demonstrating long coherence times, a large valley splitting …