Computing in memory with spin-transfer torque magnetic RAM
In-memory computing is a promising approach to addressing the processor-memory data
transfer bottleneck in computing systems. We propose spin-transfer torque compute-in …
transfer bottleneck in computing systems. We propose spin-transfer torque compute-in …
A survey of soft-error mitigation techniques for non-volatile memories
S Mittal - Computers, 2017 - mdpi.com
Non-volatile memories (NVMs) offer superior density and energy characteristics compared
to the conventional memories; however, NVMs suffer from severe reliability issues that can …
to the conventional memories; however, NVMs suffer from severe reliability issues that can …
Area-efficient SOT-MRAM with a Schottky diode
This letter presents a spin-orbit torque magnetic random access memory (SOT-MRAM) for
high-density, reliable, and energy-efficient on-chip memory application. Unlike the …
high-density, reliable, and energy-efficient on-chip memory application. Unlike the …
Compact modeling of perpendicular STT-MTJs with double reference layers
This paper shows the steps to set up a simulation framework for perpendicular spin-transfer
torque (STT)-magnetic tunnel junctions (MTJs) with double-barrier and two antiparallel …
torque (STT)-magnetic tunnel junctions (MTJs) with double-barrier and two antiparallel …
Design of ultracompact content addressable memory exploiting 1T-1MTJ cell
Content addressable memories (CAMs) are a promising category of computing-in-memory
(CiM) elements that can perform highly parallel and efficient search operations for routers …
(CiM) elements that can perform highly parallel and efficient search operations for routers …
ROCKY: A robust hybrid on-chip memory kit for the processors with STT-MRAM cache technology
M Talebi, A Salahvarzi, AMH Monazzah… - IEEE Transactions …, 2020 - ieeexplore.ieee.org
STT-MRAM is regarded as an extremely promising NVM technology for replacing SRAM-
based on-chip memories. While STT-MRAM memories benefit from ultra-low leakage power …
based on-chip memories. While STT-MRAM memories benefit from ultra-low leakage power …
Assessment of STT-MRAMs based on double-barrier MTJs for cache applications by means of a device-to-system level simulation framework
This paper explores non-volatile cache memories implemented by spin-transfer torque
magnetic random access memories (STT-MRAMs) based on state-of-the-art perpendicular …
magnetic random access memories (STT-MRAMs) based on state-of-the-art perpendicular …
Variability-aware analysis of hybrid MTJ/CMOS circuits by a micromagnetic-based simulation framework
Magnetic tunnel junctions (MTJs) are attracting an increasing interest due to their potentiality
for high-density nonvolatile memories. However, some issues need to be opportunely …
for high-density nonvolatile memories. However, some issues need to be opportunely …
System and method for in-memory computing
A memory capable of carrying out compute-in-memory (CiM) operations is disclosed. The
memory includes a matrix of bit cells having a plurality of bit cells along one or more rows …
memory includes a matrix of bit cells having a plurality of bit cells along one or more rows …
On-Device Continual Learning With STT-Assisted-SOT MRAM Based In-Memory Computing
Due to the separate memory and computation units in traditional Von-Neumann architecture,
massive data transfer dominates the overall computing system's power and latency, known …
massive data transfer dominates the overall computing system's power and latency, known …