A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability
A paradigm for MOSFET instabilities is outlined based on gate oxide traps and the detailed
understanding of their properties. A model with trap energy levels in the gate dielectric and …
understanding of their properties. A model with trap energy levels in the gate dielectric and …
Bias temperature instability of mosfets: Physical processes, models, and prediction
CMOS technology dominates the semiconductor industry, and the reliability of MOSFETs is a
key issue. To optimize chip design, trade-offs between reliability, speed, power …
key issue. To optimize chip design, trade-offs between reliability, speed, power …
Reliable time exponents for long term prediction of negative bias temperature instability by extrapolation
To predict the negative bias temperature instability (NBTI) toward the end of pMOSFETs' ten
years lifetime, power-law-based extrapolation is the industrial standard method. The …
years lifetime, power-law-based extrapolation is the industrial standard method. The …
Energy distribution of positive charges in gate dielectric: Probing technique and impacts of different defects
Positive charges (PCs) in gate dielectric shift the threshold voltage and cause a time-
dependent device variability. To assess their impact on circuits, it is useful to know their …
dependent device variability. To assess their impact on circuits, it is useful to know their …
NBTI lifetime prediction and kinetics at operation bias based on ultrafast pulse measurement
Predicting negative bias temperature instability (NBTI) lifetime can be dangerous since it is
difficult to assess its safety margin. The common technique uses gate bias V g acceleration …
difficult to assess its safety margin. The common technique uses gate bias V g acceleration …
As-grown-generation (AG) model of NBTI: A shift from fitting test data to prediction
Negative bias temperature instabilities (NBTI) received little attention pre-2000, but have
been intensively investigated post-2000, as they become limiting device lifetime. The …
been intensively investigated post-2000, as they become limiting device lifetime. The …
A single pulse charge pumping technique for fast measurements of interface states
Characterizing interface states is a key task, and it typically takes seconds when
conventional techniques, such as charge pumping (CP), are used. The stress-induced …
conventional techniques, such as charge pumping (CP), are used. The stress-induced …
An array-based odometer system for statistically significant circuit aging characterization
Variations in the number and characteristics of charges or traps contributing to transistor
degradation lead to a distribution of device “ages” at any given time. This issue is well …
degradation lead to a distribution of device “ages” at any given time. This issue is well …
Negative bias temperature instability lifetime prediction: Problems and solutions
Lifetime of pMOSFETs is limited by NBTI. Conventional slow measurement overestimates
lifetime due to recovery. The fast techniques suppress recovery, but cannot give reliable …
lifetime due to recovery. The fast techniques suppress recovery, but cannot give reliable …
Defect loss: A new concept for reliability of MOSFETs
Defect generation limits device lifetime and enhances its variability. Previous works mainly
addressed the generation kinetics and process. The current understanding is that the …
addressed the generation kinetics and process. The current understanding is that the …