Synaptic devices based neuromorphic computing applications in artificial intelligence
Synaptic devices, including synaptic memristor and synaptic transistor, are emerging
nanoelectronic devices, which are expected to subvert traditional data storage and …
nanoelectronic devices, which are expected to subvert traditional data storage and …
ABO 3 multiferroic perovskite materials for memristive memory and neuromorphic computing
The unique electron spin, transfer, polarization and magnetoelectric coupling characteristics
of ABO3 multiferroic perovskite materials make them promising candidates for application in …
of ABO3 multiferroic perovskite materials make them promising candidates for application in …
Multiferroic bismuth ferrite-based materials for multifunctional applications: Ceramic bulks, thin films and nanostructures
Among the different types of multiferroic compounds, bismuth ferrite (BiFeO 3; BFO) stands
out because it is perhaps the only one being simultaneously magnetic and strongly …
out because it is perhaps the only one being simultaneously magnetic and strongly …
[HTML][HTML] Resistive switching in emerging materials and their characteristics for neuromorphic computing
Resistive random access memory would be an important component of microelectronics in
the era of big data storage due to its efficient characteristics such as low cost, fast operating …
the era of big data storage due to its efficient characteristics such as low cost, fast operating …
Highly Uniform Resistive Switching in HfO2 Films Embedded with Ordered Metal Nanoisland Arrays
Memristors enter a critical developmental stage where emerging large‐scale integration
methods face major challenges with severe switching instabilities in the oxide layer. Here …
methods face major challenges with severe switching instabilities in the oxide layer. Here …
High‐Throughput Screening Thickness‐Dependent Resistive Switching in SrTiO3 Thin Films for Robust Electronic Synapse
M Tang, L Dai, M Cheng, Y Zhang… - Advanced Functional …, 2023 - Wiley Online Library
The functionalities and applications of oxide thin films are highly dependent on their
thickness. Most thickness‐dependent studies on oxide thin films require the preparation of …
thickness. Most thickness‐dependent studies on oxide thin films require the preparation of …
Ferroelectric polarization induced memristive behavior in bismuth ferrite (BiFeO3) based memory devices
Abstract Bismuth ferrite (BiFeO 3, BFO) thin films of various thickness were deposited using
spray pyrolysis technique at 673 K. The structural studies of the prepared BFO thin films …
spray pyrolysis technique at 673 K. The structural studies of the prepared BFO thin films …
Enhanced resistive switching characteristics in Pt/BaTiO3/ITO structures through insertion of HfO2:Al2O3 (HAO) dielectric thin layer
An enhanced resistive switching (RS) effect is observed in Pt/BaTiO3 (BTO)/ITO ferroelectric
structures when a thin HfO2: Al2O3 (HAO) dielectric layer is inserted between Pt and BTO …
structures when a thin HfO2: Al2O3 (HAO) dielectric layer is inserted between Pt and BTO …
Effect of Yb-doping on structural and electrical properties of BiFeO3 thin films
TM Pan, YC Chou, JL Her - Materials Chemistry and Physics, 2022 - Elsevier
In this paper, the incorporation of ytterbium into the BiFeO 3 thin film was fabricated on the
Pt/Ti/SiO 2/Si substrates by using both dc and rf magnetron co-sputtering method at room …
Pt/Ti/SiO 2/Si substrates by using both dc and rf magnetron co-sputtering method at room …
A perspective on electrode engineering in ultrathin ferroelectric heterostructures for enhanced tunneling electroresistance
Z Ma, Q Zhang, N Valanoor - Applied Physics Reviews, 2020 - pubs.aip.org
The combination of ferroelectricity and quantum tunneling enables the tantalizing possibility
of next-generation nonvolatile memories based on ferroelectric tunnel junctions (FTJs). In …
of next-generation nonvolatile memories based on ferroelectric tunnel junctions (FTJs). In …