Computing in the analog regime using nonlinear ferroelectric resistive memory arrays can
potentially alleviate the energy constraints and complexity/footprint challenges imposed by …

We report the demonstration of ferroelectric switching in yttrium (Y)-doped nitride
semiconductors. In this study, single-crystalline, wurtzite Y 0.07 Al 0.93 N films were …

The discovery of ferroelectricity in AlN‐based thin films, including Al1‐xScxN and Al1‐xBxN,
over the past few years has spurred great research interests worldwide. In this review, we …

Achieving ferroelectricity in III-nitride (III-N) semiconductors by alloying with rare-earth
elements, eg, scandium, has presented a pivotal step toward next-generation electronic …

In this paper, using a combination of pulse testing measurements and piezoresponse force
microscopy (PFM), an investigation of the polarization reversal behavior and the …

Wurtzite ferroelectrics are an emerging material class that expands the functionality and
application space of wide bandgap semiconductors. Promising physical properties of binary …

Scandium aluminum nitride (ScAlN) has recently emerged as an attractive material for
integrated photonics due to its favorable nonlinear optical properties and compatibility with …

Ultrawide bandgap ferroelectric nitride semiconductors have shown promising applications
in electronic, micromechanical, and optical devices. Current studies, however, have largely …

We report about the influence of nitrogen incorporation on the superconducting transition
temperature TC of TiNbMoTaW high entropy alloy films deposited using high power impulse …

Wurtzite LaN (wz-LaN) is a semiconducting nitride that has piezoelectric and ferroelectric
properties, making it promising for applications in electronics, either as a binary compound …