In this work, a systematic photoluminescence (PL) study on three series of gallium
oxide/aluminum gallium oxide films and bulk single crystals is performed including …

Selective area doping technique is essential for diversifying semiconductor device
structures. In this letter, selective high-resistance zones on-Ga2O3 wafers were successfully …

Abstract The cylindrical Sn: β-Ga 2 O 3 crystal with high crystalline quality was successfully
designed and grown by the innovative edge-defined film-fed growth (EFG) method equipped …

The authors of this article reported the effects of annealing on performance of GLAD
synthesized vertical p-NiO/n-β-Ga 2 O 3 heterostructure (HS) nanowire (NW) arrays based …

Abstract β-Ga 2 O 3 has demonstrated insulating properties with Mg, Fe, and Zn acceptor
doping. Here we investigate Cu doping (0.25 at.%) in bulk Czochralski (CZ) and vertical …

Inevitable thermal-expansion-coefficient mismatch at the interface of epitaxial-layer/foreign-
substrate is generally considered as a weak side since considerable strain would be …

While a number of OH and OD vibrational lines have been observed for hydrogen and
deuterium in b-Ga2O3, it has been commonly reported that there is no absorption with a …

Tetravalent ion doping is widely used in modulate the electrical properties of β-Ga 2 O 3, but
the effectiveness of different dopants and the transport behavior vary significantly among …

As the most stable phase of gallium oxide, β-Ga2O3 can enable high-quality, large-size, low-
cost, and controllably doped wafers by the melt method. It also features a bandgap of 4.7 …

Zinc-doped monoclinic gallium oxide (β-Ga 2 O 3: Zn) has semi-insulating properties that
could make it a preferred material as a substrate for power devices. Infrared and UV/Visible …