Silicon carbide (SiC) is a wide bandgap semiconductor having high critical electric field
strength, making it especially attractive for high-power and high-temperature devices …

We present a comprehensive review of the properties of the epitaxial 4H silicon carbide
polytype (4H–SiC). Particular emphasis is placed on those aspects of this material related to …

Wet etching of silicon carbide typically exhibits poor etching efficiency and low aspect ratio.
In this study, an etching structure that exploits anisotropic charge carrier flow to enable high …

This paper presents a comprehensive short-circuit ruggedness evaluation and numerical
investigation of up-to-date commercial silicon carbide (SiC) MOSFETs. The short-circuit …

Only a few years ago, an account of degradation of silicon carbide high-voltage pin diodes
was presented at the European Conference on Silicon Carbide and Related Compounds …

Over the years, the fundamentals of VLSI technology have evolved to include a wide range
of topics and a broad range of practices. To encompass such a vast amount of knowledge …

The effects of measurement technique and measurement conditions (eg, injection level,
temperature) on measured carrier lifetimes in n− 4H-SiC epilayers are investigated both …

We investigated the dependency of minority carrier lifetimes on the nitrogen concentration,
temperature, and the injected carrier concentration for highly nitrogen-doped 4H-SiC …

A reactor concept for the growth of high‐quality epitaxial SiC films has been investigated.
The reactor concept is based on a hot‐wall type susceptor which, due to the unique design …

Silicon carbide is a wide-band-gap semiconductor suitable for high-power high-voltage
devices and it has excellent properties for use in photoconductive semiconductor switches …