Abstract Two‐dimensional (2D) nanosheets, which possess atomic or molecular thickness
and infinite planar lengths, are regarded as the thinnest functional nanomaterials. The …

Atomic layer deposition (ALD) is gaining attention as a thin film deposition method, uniquely
suitable for depositing uniform and conformal films on complex three-dimensional …

Nanostructured materials such as nanocomposites and nanolaminates are currently of
intense interest in modern materials research. Nanolaminate materials are fully dense, ultra …

The resistive switching (RS) behavior of multilayered ReRAM devices is typically influenced
by two aspects: the intrinsic properties of the dielectric multilayer, and other extrinsic …

Atomic layer deposition (ALD) technology is one of the cornerstones of the modern
microelectronics industry, where it is exploited in the fabrication of high‐quality inorganic …

The high dielectric constant ZrO2, as one of the most promising gate dielectric materials for
next generation semiconductor device, is expected to be introduced as a new high k …

The effects of Al doping in atomic-layer-deposited HfO2 (AHO) and ZrO2 (AZO) films on the
evolutions of their crystallographic phases, grain sizes, and electric properties, such as their …

An important challenge in current microelectronics research is the development of
techniques for making smaller, higher‐performance electronic components. In this context …

In the advancement of metal–oxide–semiconductor technology, Si-based semiconductor,
with SiO 2 as outstanding dielectric, has been dominating microelectronic industry for …

Thin solid films consisting of ZrO 2 and Ta 2 O 5 were grown by atomic layer deposition at
300 C. Ta 2 O 5 films doped with ZrO 2, TaZr 2.75 O 8 ternary phase, or ZrO 2 doped with Ta …