Low-cost, high-efficiency, and high-speed SiGe phototransistors in commercial BiCMOS

T Yin, AM Pappu, AB Apsel - IEEE Photonics Technology …, 2005 - ieeexplore.ieee.org
We present a new approach to obtain low-cost and high-performance SiGe phototransistors
in a commercial BiCMOS process. Photoresponsivity of 2.7 A/W was obtained for 850-nm …

SiGe photo-transistor for low-cost SSMF-based radio-over-fiber applications at 850nm

J Nanni, ZG Tegegne, C Viana… - IEEE Journal of …, 2019 - ieeexplore.ieee.org
This paper investigates the possibility of implementing SiGe Hetero-junction bipolar Photo-
Transistor (HPT) within low cost and low power consumption Radio-over-Fiber (RoF) …

Use of SiGe Photo-Transistor in RoF links based on VCSEL and standard single mode fiber for low cost LTE applications

J Nanni, ZG Tegegne, C Algani… - … Topical Meeting on …, 2018 - ieeexplore.ieee.org
This paper presents for the first time the transmission of LTE signal based-on Radio-over-
Fiber (RoF) scheme by using SiGe Hetero-junction Photo-Transistor as photo-receiver. The …

[图书][B] Microwaves Photonic Links: Components and Circuits

C Rumelhard, C Algani, AL Billabert - 2013 - books.google.com
This book presents the electrical models for the different elements of a photonic microwave
link like lasers, external modulators, optical fibers, photodiodes and phototransistors. The …

Intrinsic frequency response of silicon–germanium phototransistor associated with 850-nm multimode fiber

ZG Tegegne, C Viana, JL Polleux… - … on Electron Devices, 2018 - ieeexplore.ieee.org
The intrinsic frequency response of silicon-germanium heterojunction bipolar
phototransistors (HPTs) at 850 nm is studied to be implemented in multimode fiber systems …

Design and implementation of SiGe HPTs using an 80GHz SiGe bipolar process technology

MD Rosales, JL Polleux… - 8th IEEE International …, 2011 - ieeexplore.ieee.org
Design and implementation of SiGe HPTs using an 80GHz SiGe bipolar process technology
Page 1 Design and Implementation of SiGe HPTs using an 80GHz SiGe Bipolar Process …

Study of lateral scaling impact on the frequency performance of SiGe heterojunction bipolar phototransistor

ZG Tegegne, C Viana, JL Polleux… - IEEE Journal of …, 2018 - ieeexplore.ieee.org
The influence of the lateral scaling such as emitter width and length on the frequency
behavior of SiGe bipolar transistor is experimentally studied. Electrical transistors of different …

Towards 10-40 GHz on-chip micro-optical links with all integrated Si Av LED optical sources, Si N based waveguides and Si-Ge detector technology

KA Ogudo, LW Snyman, JL Polleux… - Optical …, 2014 - spiedigitallibrary.org
Micron dimensioned on-chip optical links of 50 micron length, utilizing 650–850 nm
propagation wavelength, have been realized in a Si Ge bipolar process. Key design …

An 850 nm SiGe/Si HPT with a 4.12 GHz maximum optical transition frequency and 0.805 A/W responsivity

ZG Tegegne, C Viana, MD Rosales… - International journal of …, 2017 - cambridge.org
A 10× 10 μm2 SiGe heterojunction bipolar photo-transistor (HPT) is fabricated using a
commercial technological process of 80 GHz SiGe bipolar transistors (HBT). Its technology …

Full area emitter SiGe phototransistor for opto-microwave circuit applications

MD Rosales, J Schiellein, C Viana… - The 9th International …, 2012 - ieeexplore.ieee.org
Full area emitter SiGe phototransistor for opto-microwave circuit applications Page 1 Full Area
Emitter SiGe Phototransistor for Opto-Microwave Circuit Applications Marc D. Rosales1, Julien …