RF transistors: Recent developments and roadmap toward terahertz applications
F Schwierz, JJ Liou - Solid-State Electronics, 2007 - Elsevier
This paper provides an overview on the status, development and performance of current and
future RF transistors. The targets specified in the 2005 issue and the 2006 update of the …
future RF transistors. The targets specified in the 2005 issue and the 2006 update of the …
Record RF performance of 45-nm SOI CMOS technology
S Lee, B Jagannathan, S Narasimha… - 2007 IEEE …, 2007 - ieeexplore.ieee.org
We report record RF performance in 45-nm silicon-on-insulator (SOI) CMOS technology. RF
performance scaling with channel length and layout optimization is demonstrated. Peak f T's …
performance scaling with channel length and layout optimization is demonstrated. Peak f T's …
A comparison of the degradation in RF performance due to device interconnects in advanced SiGe HBT and CMOS technologies
This paper investigates the impact of the interconnect between the bottom and the top metal
layers on the transistor RF performance of CMOS and silicon-germanium (SiGe) …
layers on the transistor RF performance of CMOS and silicon-germanium (SiGe) …
Fully depletion of advanced silicon on insulator MOSFETs
MK Md Arshad, N Othman, U Hashim - Critical Reviews in Solid …, 2015 - Taylor & Francis
Scaling of the transistor has been tremendous successful in the beginning with reduction of
the gate oxide thickness and increase of doping concentration. Moving into smaller …
the gate oxide thickness and increase of doping concentration. Moving into smaller …
Ge-on-SOI-detector/Si-CMOS-amplifier receivers for high-performance optical-communication applications
In this paper, an overview and assessment of high-performance receivers based upon Ge-
on-silicon-on-insulator (Ge-on-SOI) photodiodes and Si CMOS amplifier ICs is provided …
on-silicon-on-insulator (Ge-on-SOI) photodiodes and Si CMOS amplifier ICs is provided …
A W-band LNA/phase shifter with 5-dB NF and 24-mW power consumption in 32-nm CMOS SOI
M Sayginer, GM Rebeiz - IEEE Transactions on Microwave …, 2018 - ieeexplore.ieee.org
This paper presents a W-band phased array receive front end in 32-nm CMOS silicon-on-
insulator technology. The architecture is based on cascode low-noise amplifiers and passive …
insulator technology. The architecture is based on cascode low-noise amplifiers and passive …
Effect of parasitic elements on UTBB FD SOI MOSFETs RF figures of merit
This work details the harmful effect of parasitic resistances and capacitances on RF figures
of merit (FoM) of ultra-thin body and thin buried oxide (UTBB) FD SOI n-MOSFETs. It is …
of merit (FoM) of ultra-thin body and thin buried oxide (UTBB) FD SOI n-MOSFETs. It is …
Analog/RF performance of multichannel SOI MOSFET
TC Lim, E Bernard, O Rozeau, T Ernst… - IEEE transactions on …, 2009 - ieeexplore.ieee.org
In this paper, for the first time, we present a detailed RF experimental and simulation study of
a 3-D multichannel SOI MOSFET (MCFET). Being different from the conventional planar …
a 3-D multichannel SOI MOSFET (MCFET). Being different from the conventional planar …
Microwave noise and FET devices
F Danneville - IEEE Microwave magazine, 2010 - ieeexplore.ieee.org
In this article, a short presentation of available FET technologies (GaAs MESFET, ΠI-V
HEMT, and silicon CMOS) has been presented. Why minimum NF is suitable to benchmark …
HEMT, and silicon CMOS) has been presented. Why minimum NF is suitable to benchmark …