Dawn of nitride ferroelectric semiconductors: from materials to devices
III-nitride semiconductors are promising optoelectronic and electronic materials and have
been extensively investigated in the past decades. New functionalities, such as …
been extensively investigated in the past decades. New functionalities, such as …
An epitaxial ferroelectric ScAlN/GaN heterostructure memory
Electrically switchable bistable conductance that occurs in ferroelectric materials has
attracted growing interest due to its promising applications in data storage and in‐memory …
attracted growing interest due to its promising applications in data storage and in‐memory …
Thermal Stability of the Ferroelectric Properties in 100 nm-Thick Al0.72Sc0.28N
The discovery of ferroelectricity in aluminum scandium nitride (Al1–x Sc x N) opens
technological perspectives for harsh environments and space-related memory applications …
technological perspectives for harsh environments and space-related memory applications …
Perspectives on nitride ferroelectric semiconductors: Challenges and opportunities
The recent demonstration of ferroelectricity in nitride materials has enabled a broad
spectrum of applications across electronics, optoelectronics, photovoltaics, photonics …
spectrum of applications across electronics, optoelectronics, photovoltaics, photonics …
Lower ferroelectric coercive field of ScGaN with equivalent remanent polarization as ScAlN
The ferroelectricity of wurtzite, Sc x Ga 1− x N (x= 0.35–0.44), was demonstrated in a metal–
ferroelectric–metal capacitor. The remanent polarization (P r) obtained from positive-up …
ferroelectric–metal capacitor. The remanent polarization (P r) obtained from positive-up …
Reactive sputtering of ferroelectric AlScN films with H2 gas flow for endurance improvement
The impact of H 2 gas flow in the reactive sputtering process to 60 nm-thick ferroelectric Al
1− x Sc x N films is investigated with x of 0.26 (high-Sc) and 0.12 (low-Sc). Al 1− x Sc x N …
1− x Sc x N films is investigated with x of 0.26 (high-Sc) and 0.12 (low-Sc). Al 1− x Sc x N …
Discovery of wurtzite solid solutions with enhanced piezoelectric response using machine learning
While many piezoelectric materials are known, there is still great potential to improve on the
figures of merit of existing materials through compositional doping and forming solid …
figures of merit of existing materials through compositional doping and forming solid …
Computational understanding role of vacancies and distortions in wurtzite ferroelectric memory materials: implications for device miniaturization
The ever-increasing importance of applications based on machine-learning has driven the
need to develop delicate energy-efficient electronic hardware. Compared to traditional von …
need to develop delicate energy-efficient electronic hardware. Compared to traditional von …
Realization of ferroelectricity in sputtered Al1-xScxN films with a wide range of Sc content
J Xi, D Zhou, T Lv, Y Tong, Q Kou, Y Zhao - Materials Today …, 2024 - Elsevier
The ferroelectric properties of wurtzite-structured Al 1-x Sc x N thin films are affected
simultaneously by the Sc concentration and in-plane stress state, however, the interaction …
simultaneously by the Sc concentration and in-plane stress state, however, the interaction …
Full polarization reversal at room temperature in unsubstituted AlN
Room temperature ferroelectricity in unsubstituted AlN films is studied to examine the role of
cation substitution into wurtzite materials. AlN and (Al 0.7 Sc 0.3) N films deposited on (111) …
cation substitution into wurtzite materials. AlN and (Al 0.7 Sc 0.3) N films deposited on (111) …