The modelling and simulation of low-dimensional nanoelectronic devices is important,
because the semiconductor industry has scaled transistors down to the sub-10 nm regime …

This paper presents an efficient carbon nanotube (CNT) transistor modeling technique that
is based on cubic spline approximation of the nonequilibrium mobile charge density. The …

Silicene, a 2D allotrope of silicon, is predicted to be a potential material for future transistor
that might be compatible with present silicon fabrication technology. Similar to graphene …

Comparative benchmarking of a graphene nanoribbon field‐effect transistor (GNRFET) and
a nanoscale metal‐oxide‐semiconductor field‐effect transistor (nano‐MOSFET) for …

This paper presents the implementation of band-to-band tunneling (BTBT) mechanisms into
the compact model of a conventional carbon nanotube transistor FET featuring a MOSFET …

This paper presents a new carbon nanotube transistor (CNT) modelling technique which is
based on an efficient numerical piece-wise non-linear approximation of the non-equilibrium …

This paper presents a wide frequency range three-stage voltage-controlled ring oscillator in
CNTFET technology. The advantages of CNTFETs are the high speed of charge carriers …

This paper presents a versatile compact model dedicated to 1D transistors in order to predict
the ultimate performances of nano-device-based circuits. We have developed a thermionic …

Because of its compact size and unique ballistic, thermal management, and low resistive
capabilities, the CNTFET is an efficient semiconductor device. The tiny contact space makes …

Carbon Nanotube Based Field Effect Transistors (CNTFET) are being extensively studied as
a counterpart device of silicon compatible CMOS. This paper presents a numerical …