Solution-processed memristors: performance and reliability

S Pazos, X Xu, T Guo, K Zhu, HN Alshareef… - Nature Reviews …, 2024 - nature.com
Memristive devices are gaining importance in the semiconductor industry for applications in
information storage, artificial intelligence cryptography and telecommunication. Memristive …

On the thermal models for resistive random access memory circuit simulation

JB Roldán, G González-Cordero, R Picos, E Miranda… - Nanomaterials, 2021 - mdpi.com
Resistive Random Access Memories (RRAMs) are based on resistive switching (RS)
operation and exhibit a set of technological features that make them ideal candidates for …

High‐Temporal‐Resolution Characterization Reveals Outstanding Random Telegraph Noise and the Origin of Dielectric Breakdown in h‐BN Memristors

S Pazos, T Becker, MA Villena, W Zheng… - Advanced Functional …, 2024 - Wiley Online Library
Memristor‐based electronic memory have recently started commercialization, although its
market size is small (~ 0.5%). Multiple studies claim their potential for hardware …

Application of the quasi-static memdiode model in cross-point arrays for large dataset pattern recognition

FL Aguirre, SM Pazos, F Palumbo, J Suñé… - IEEE …, 2020 - ieeexplore.ieee.org
We investigate the use and performance of the quasi-static memdiode model (QMM) when
incorporated into large cross-point arrays intended for pattern classification tasks. Following …

Current transient response and role of the internal resistance in HfOx-based memristors

MB Gonzalez, M Maestro-Izquierdo… - Applied Physics …, 2020 - pubs.aip.org
Filamentary-type valence change memristors based on HfO 2 are currently being explored
as potential candidates to emulate the synaptic functionality of biological inspired …

SPICE simulation of RRAM-based cross-point arrays using the dynamic memdiode model

FL Aguirre, SM Pazos, F Palumbo, J Suñé… - Frontiers in …, 2021 - frontiersin.org
We thoroughly investigate the performance of the Dynamic Memdiode Model (DMM) when
used for simulating the synaptic weights in large RRAM-based cross-point arrays (CPA) …

Fast fitting of the dynamic memdiode model to the conduction characteristics of RRAM devices using convolutional neural networks

FL Aguirre, E Piros, N Kaiser, T Vogel, S Petzold… - Micromachines, 2022 - mdpi.com
In this paper, the use of Artificial Neural Networks (ANNs) in the form of Convolutional
Neural Networks (AlexNET) for the fast and energy-efficient fitting of the Dynamic Memdiode …

Minimization of the line resistance impact on memdiode-based simulations of multilayer perceptron arrays applied to pattern recognition

FL Aguirre, NM Gomez, SM Pazos, F Palumbo… - Journal of Low Power …, 2021 - mdpi.com
In this paper, we extend the application of the Quasi-Static Memdiode model to the realistic
SPICE simulation of memristor-based single (SLPs) and multilayer perceptrons (MLPs) …

Impact of bilayered oxide stacks on the breakdown transients of metal–oxide–semiconductor devices: An experimental study

SM Pazos, S Boyeras Baldomá, FL Aguirre… - Journal of Applied …, 2020 - pubs.aip.org
The role of the bilayered structure of the gate oxide on the dynamics of progressive
breakdown is systematically studied on Au/Cr/HfO 2/Al 2 O 3/InGaAs metal–oxide …

Assessment and improvement of the pattern recognition performance of memdiode-based cross-point arrays with randomly distributed stuck-at-faults

FL Aguirre, SM Pazos, F Palumbo, A Morell, J Suñé… - Electronics, 2021 - mdpi.com
In this work, the effect of randomly distributed stuck-at faults (SAFs) in memristive cross-point
array (CPA)-based single and multi-layer perceptrons (SLPs and MLPs, respectively) …