Band-gap material selection for remote high-power laser transmission
High-power laser transmission (HPLT) is attracting a huge interest from both the scientific
and industrial community due to its large number of potential applications and future …
and industrial community due to its large number of potential applications and future …
The role of non-homogeneous barrier on the electrical performance of 15R–SiC Schottky diodes grown by in-situ RF sputtering
In the present work, we have demonstrated the impact of barrier inhomogeneities on the
electrical characteristics of silicon carbide (SiC) based Schottky barrier diodes (SBDs) …
electrical characteristics of silicon carbide (SiC) based Schottky barrier diodes (SBDs) …
TCAD device modelling and simulation of wide bandgap power semiconductors
Technology computer-aided Design (TCAD) is essential for devices technology
development, including wide bandgap power semiconductors. However, most TCAD tools …
development, including wide bandgap power semiconductors. However, most TCAD tools …
Relation between work function and structural properties of triangular defects in 4H-SiC epitaxial layer: Kelvin probe force microscopic and spectroscopic analyses
To understand the relationship between the work function and structural properties of
sufficiently expanded triangular defects (size:∼ 250 μm) in the 4H-SiC epitaxial layer, Kelvin …
sufficiently expanded triangular defects (size:∼ 250 μm) in the 4H-SiC epitaxial layer, Kelvin …
[HTML][HTML] A new path towards ultra-high efficient laser power converters: Silicon carbide-based multijunction devices
Current high power laser transmission technology faces two major limitations to improve the
efficiency of the photovoltaic receivers: the intrinsic entropic losses associated to low …
efficiency of the photovoltaic receivers: the intrinsic entropic losses associated to low …
Conduction mechanisms in epitaxial NiO/Graphene gas sensors
SS Niavol, M Budde, A Papadogianni… - Sensors and Actuators B …, 2020 - Elsevier
Integrated, highly sensitive and reversible sensor devices for toxic and hazardous gases in
environmental pollution monitoring can be realized with graphene-based materials. Here we …
environmental pollution monitoring can be realized with graphene-based materials. Here we …
Validated physical models and parameters of bulk 3C–SiC aiming for credible technology computer aided design (TCAD) simulation
The cubic form of SiC (β-or 3C-) compared to the hexagonal α-SiC polytypes, primarily 4H-
and 6H–SiC, has lower growth cost and can be grown heteroepitaxially in large area silicon …
and 6H–SiC, has lower growth cost and can be grown heteroepitaxially in large area silicon …
4H-silicon carbide as particle detector for high-intensity ion beams
M Christanell, M Tomaschek… - Journal of …, 2022 - iopscience.iop.org
In ion cancer therapy, high-intensity ion beams are used to treat tumors by taking advantage
of the Bragg-peak. Typical ion therapy centers use particle rates up to 10 10 ions/second for …
of the Bragg-peak. Typical ion therapy centers use particle rates up to 10 10 ions/second for …
[HTML][HTML] Crystal growth principle, method, properties of silicon carbide and its new process prepared from silicon cutting waste
S Zhang, Y Ren, X Yang, W Ma, H Chen, G Lv… - Journal of Materials …, 2024 - Elsevier
The third-generation semiconductor silicon carbide (SiC) has attracted widespread attention
due to its excellent properties, such as high thermal conductivity, large bandgap, high …
due to its excellent properties, such as high thermal conductivity, large bandgap, high …
High-temperature piezoresistance of silicon carbide and gallium nitride materials
T Sugiura, N Takahashi, R Sakota… - IEEE Journal of the …, 2022 - ieeexplore.ieee.org
We examine the temperature dependence of the piezoresistive coefficients of silicon carbide
(SiC) and gallium nitride (GaN) crystals, which are prospective materials for high …
(SiC) and gallium nitride (GaN) crystals, which are prospective materials for high …