Model of a tunneling current in an anisotropic Si/Si1− xGex/Si heterostructure with a nanometer-thick barrier including the effect of parallel–perpendicular kinetic …
A theoretical model of an electron tunneling current in an anisotropic Si/Si 1− x Ge x/Si
heterostructure was developed. The parallel and perpendicular kinetic energies were …
heterostructure was developed. The parallel and perpendicular kinetic energies were …
Influence of hydrodynamic models on the prediction of submicrometer device characteristics
M Ieong, TW Tang - IEEE Transactions on Electron Devices, 1997 - ieeexplore.ieee.org
The influence of different hydrodynamic models on the prediction of submicron device
characteristics is studied using the General Hydrodynamic Equation solver. We analyze the …
characteristics is studied using the General Hydrodynamic Equation solver. We analyze the …
Comparison of non-parabolic hydrodynamic simulations for semiconductor devices
AW Smith, KF Brennan - Solid-state Electronics, 1996 - Elsevier
Parabolic drift-diffusion simulators are common engineering level design tools for
semiconductor devices. Hydrodynamic simulators, based on the parabolic band …
semiconductor devices. Hydrodynamic simulators, based on the parabolic band …
2D numerical investigation of the impact of compositional grading on the performance of submicrometer Si-SiGe MOSFET's
SP Voinigescu, PB Rabkin… - IEEE Transactions on …, 1995 - ieeexplore.ieee.org
Computer simulation is used to establish the impact of design parameters on the
subthreshold characteristics, hot carrier injection, and high frequency performance of Si …
subthreshold characteristics, hot carrier injection, and high frequency performance of Si …
HEMT and HBT small-signal model optimization using a genetic algorithm
This paper describes the application of a genetic algorithm to the wideband optimization of
the small-signal models of HEMTs and HBTs. The use of a genetic algorithm allows us to …
the small-signal models of HEMTs and HBTs. The use of a genetic algorithm allows us to …
A 2D simulation study on the dc and transient behaviour of a SiGe-base heterojunction bipolar device with an extended germanium profile into the n-epi region with …
BY Chen, HC Wu, JB Kuo - solid-state electronics, 1996 - Elsevier
This paper reports a two-dimensional simulation study of the dc and transient behaviour of a
SiGe-base HBT with an extended germanium profile into the n-epi region. With an extended …
SiGe-base HBT with an extended germanium profile into the n-epi region. With an extended …
Comparison of Monte Carlo, energy transport, and drift-diffusion simulations for a Si/SiGe/Si HBT
DM Nuernbergk, H Forster, F Schwierz… - IEEE MTT/ED/AP …, 1997 - ieeexplore.ieee.org
The aim of this work is to compare device simulation results for a Si/SiGe/Si-hetero bipolar
transistor (HBT) by using Monte Carlo (MC), energy transport (ETM), and drift-diffusion …
transistor (HBT) by using Monte Carlo (MC), energy transport (ETM), and drift-diffusion …
[PDF][PDF] Arus Terobosan Pada Transistor Dwikutub Struktur Hetero Si/Si1-xGex/Si
AMB Tergradasi - academia.edu
Arus terobosan di transistor dwikutub struktur hetero Si/Si1-xGex/Si anisotropik untuk
kondisi germanium pada basis yang tidak konstan dianalisis di sini. Konsentrasi germanium …
kondisi germanium pada basis yang tidak konstan dianalisis di sini. Konsentrasi germanium …
PENURUNAN NOISE FIGURE PERFORMANCE (FN) PADA HETEROJUNCTION BIPOLAR TRANSISTOR SI/SI 1-X GEX BERDASARKAN PENGATURAN STRIPE …
T Alamsyah, D Hartanto… - Makara Journal of …, 2011 - scholarhub.ui.ac.id
Paper ini membahas pengaruh perubahan stripe emitter area (Ae) dan fraction mole (x)
terhadap unjuk kerja heterojunction bipolar transistor (HBT) SiGe antara lain resistensi …
terhadap unjuk kerja heterojunction bipolar transistor (HBT) SiGe antara lain resistensi …
Arus Terobosan Pada Transistor Dwikutub Struktur Hetero Si/Si1-xGex/Si Anisotropik Melewati Basis Tergradasi (Graded Base)
L Hasanah, K Khairurrijal - BERKALA FISIKA, 2010 - eprints.undip.ac.id
Arus terobosan di transistor dwikutub struktur hetero Si/Si1-xGex/Si anisotropik untuk
kondisi germanium pada basis yang tidak konstan dianalisis di sini. Konsentrasi germanium …
kondisi germanium pada basis yang tidak konstan dianalisis di sini. Konsentrasi germanium …