The manipulation of a magnetic domain wall (DW) by a spin polarized current in
ferromagnetic nanowires has attracted tremendous interest during the last years due to …

The operation of racetrack memories,, is based on the motion of domain walls in atomically
thin, perpendicularly magnetized nanowires, which are interfaced with adjacent metal layers …

While it is often assumed that the orbital response is suppressed and short ranged due to
strong crystal field potential and orbital quenching, we show that the orbital response can be …

This tutorial article introduces the physics of spin transfer torques in magnetic devices. Our
intention is that it be accessible to beginning graduate students. We provide an elementary …

Exchange bias, a shift in the hysteresis loop of a ferromagnet arising from interfacial
exchange coupling between adjacent ferromagnetic and antiferromagnetic layers, is an …

Spin–orbit interaction-driven phenomena such as the spin Hall and Rashba effect in
ferromagnetic/heavy metal bilayers enables efficient manipulation of the magnetization via …

The spin-orbital interaction in heavy nonmagnetic metal/ferromagnetic metal bilayer systems
has attracted great attention and exhibited promising potentials in magnetic logic devices …

Spin currents have an important role in many proposed spintronic devices, as they govern
the switching process of magnetic bits in random access memories or drive domain wall …

A number of proposed next-generation electronic devices, including novel memory elements
and versatile transistor circuits, rely on spin currents, that is, the flow of electron angular …

In this article, we review fascinating new mechanisms on recently observed remarkable
current driven domain wall motion in nanowires formed from perpendicularly magnetized …