Many power switching devices are used in hybrid vehicles (HVs) and electric vehicles (EVs).
To improve the efficiency of HVs and EVs, better performance characteristics than those of Si …

Failure modes and mechanisms of AlGaN/GaN high-electron-mobility transistors are
reviewed. Data from three de-accelerated tests are presented, which demonstrate a close …

Over the last decade, gallium nitride (GaN) has emerged as an excellent material for the
fabrication of power devices. Among the semiconductors for which power devices are …

The high temperature stability of AlGaN/GaN and lattice-matched InAlN/GaN heterostructure
FETs has been evaluated by a stepped temperature test routine under large-signal …

In this paper we present a new measurement technique for extracting dynamic on-resistance
(R dson) of GaN transistors. Dynamic R dson of commercial GaN transistors in soft-switching …

Due to the excellent material characteristics, AlGaN/GaN HEMTs are widely used in high
power and high frequency applications. However, the existence of damages, defects and …

High-electric-field degradation phenomena are investigated in GaN-capped AlGaN/GaN
HEMTs by comparing experimental data with numerical device simulations. Under power …

Self-heating in AlGaN/GaN HFETs was investigated using electrical analysis and micro-
Raman thermography. Two typically employed electrical methods were assessed to provide …

We address degradation aspects of lattice-matched unpassivated InAlN/GaN high-electron-
mobility transistors (HEMTs). Stress conditions include an off-state stress, a semi-on stress …

The physical mechanisms underlying RF current-collapse effects in AlGaN-GaN high-
electron-mobility transistors are investigated by means of measurements and numerical …