Typical semiconductor data storage devices reach a breaking point in terms of their physical
dimension and storage capacity. Among various upcoming high-density non-volatile …

Variability control over the resistive switching process is one of the key requirements to
improve the performance stability of the resistive random access memory (RRAM) devices …

The impact of the dielectric thickness, forming polarity, and current compliance on the self-
rectifying current-voltage (IV) characteristics of Ni/HfO 2/n+-Si resistive random access …

Reducing device to device variations of filamentary analog resistive random access memory
(RRAM) is crucial for neuromorphic computing. Larger variations decrease the computing …

In this paper, the presence of filamentary current instabilities in the high resistance state of
Ni/HfO 2-based RRAM devices and their associated current fluctuations mechanisms are …

Herein, we propose high-performance Ti/STO/n+-Si and Ag/STO/n+-Si write-once-read-
many-times devices, where the resistance transition mechanisms are controlled by oxygen …

Abstract In this work, Ni/HfO 2/Al 2 O 3/n+-Si and Ni/Al 2 O 3/HfO 2/n+-Si RRAM devices
have been investigated with the purpose to determine the role of the HfO 2/Al 2 O 3 stacking …

In this work, the unipolar resistive switching behaviour of Ni/HfO 2/Si (n+) devices is studied.
The structures are characterized using both current and voltage sweeps, with the device …

Resistive switching in metal–insulator–metal nanosctructures is being intensively studied for
nonvolatile memory applications. Here, we report unipolar resistive switching in …

Tungsten (W) is one of the most promising materials to be used in resistive random‐access
memory electrodes due to its low work function and compatibility with semiconductors, which …