Recent advances in 2D MXenes for photodetection
A new class of 2D transition metal carbides, carbonitrides and nitrides, termed MXenes, has
emerged as a new candidate for many applications in electronics, optoelectronics, and …
emerged as a new candidate for many applications in electronics, optoelectronics, and …
Novel dilute bismide, epitaxy, physical properties and device application
Dilute bismide in which a small amount of bismuth is incorporated to host III-Vs is the least
studied III-V compound semiconductor and has received steadily increasing attention since …
studied III-V compound semiconductor and has received steadily increasing attention since …
Ambipolar and Robust WSe2 Field‐Effect Transistors Utilizing Self‐Assembled Edge Oxides
Transition metal oxides (TMOs) with high work function (WF) show promising properties as
unipolar p‐type contacts for transition metal dichalcogenides. Here, ambipolar field‐effect …
unipolar p‐type contacts for transition metal dichalcogenides. Here, ambipolar field‐effect …
Growth and material properties of InPBi thin films using gas source molecular beam epitaxy
Abstract The effects of Bi, In flux and PH 3 pressure on Bi incorporation, structural and
transport properties of InPBi grown by gas source molecular beam epitaxy have been …
transport properties of InPBi grown by gas source molecular beam epitaxy have been …
Bi-induced acceptor level responsible for partial compensation of native free electron density in InP1− xBix dilute bismide alloys
Ł Gelczuk, H Stokowski, J Kopaczek… - Journal of Physics D …, 2016 - iopscience.iop.org
Deep level transient spectroscopy (DLTS) has been applied to study electron and hole traps
in InPBi alloys with 2.2 and 2.4% Bi grown by molecular beam epitaxy. One donor-like trap …
in InPBi alloys with 2.2 and 2.4% Bi grown by molecular beam epitaxy. One donor-like trap …
Evidence of defect‐annealing effect in swift heavy‐ion‐irradiated indium phosphide
P Hu, L Xu, P Zhai, J Zeng, S Zhang… - Journal of Raman …, 2022 - Wiley Online Library
Single‐crystal indium phosphide (InP) was irradiated by swift heavy ions (40Ar, 56Fe, 86Kr,
181Ta, and 209Bi) with different energies. The damage evolutions have been investigated …
181Ta, and 209Bi) with different energies. The damage evolutions have been investigated …
Growth of dilute quaternary alloy InPNBi and its′ characterization
InPNBi alloy semiconductor is grown for the first time on InP substrates by liquid phase
epitaxy (LPE) technique by adding minute amounts of polycrystalline InN and Bi to the …
epitaxy (LPE) technique by adding minute amounts of polycrystalline InN and Bi to the …
Raman spectroscopy of GaSb1− xBix alloys with high Bi content
S Souto, J Hilska, Y Galvão Gobato, D Souza… - Applied Physics …, 2020 - pubs.aip.org
We report on the crystal morphology and Raman scattering features of high structural quality
GaSb 1− x Bi x alloys grown by molecular beam epitaxy with a high Bi content (x up to∼ …
GaSb 1− x Bi x alloys grown by molecular beam epitaxy with a high Bi content (x up to∼ …
Nanoscale distribution of Bi atoms in InP1−xBix
The nanoscale distribution of Bi in InPBi is determined by atom probe tomography and
transmission electron microscopy. The distribution of Bi atoms is not uniform both along the …
transmission electron microscopy. The distribution of Bi atoms is not uniform both along the …
Bismuth-content-dependent polarized Raman spectrum of InPBi alloy
We systematically investigate the optical properties of the InP 1− x Bi x ternary alloys with
0≤ x≤ 2.46%, by using high resolution polarized Raman scattering measurement. Both InP …
0≤ x≤ 2.46%, by using high resolution polarized Raman scattering measurement. Both InP …