This paper reviews the device physics and technology of optoelectronic devices based on
semiconductors of the GaN family, operating in the spectral regions from deep UV to …

III-nitride nanostructures have recently emerged as promising materials for new
intersubband (ISB) devices in a wide variety of applications. These ISB technologies rely on …

We have studied the effect of growth and design parameters on the performance of Si-doped
GaN/AlN multiquantum-well (MQW) structures for intersubband optoelectronics in the near …

Heteroepitaxial Ga 2 O 3 was grown on c-plane sapphire by molecular beam epitaxy, pulsed-
laser deposition, and metalorganic chemical vapor deposition. Investigation by scanning …

A quantum cascade detector in the GaN/AlGaN/AlN material system was implemented. The
design takes advantage of the large internal field existing in the nitrides in order to generate …

This paper reports on the growth, structural and optical properties of GaN free-stranding
nanowires synthesized in catalyst-free mode on Si (111) substrate by plasma-assisted …

We report the generation of room temperature microwave oscillations from GaN/AlN
resonant tunneling diodes, which exhibit record-high peak current densities. The tunneling …

First-and second-order piezoelectric coefficients for all binary group-III nitride (III-N) wurtzite
semiconductors are calculated using ab initio density functional theory. The method used …

Combining the power and possibilities of heterostructure engineering with the collective and
emergent properties of quantum materials, quantum-matter heterostructures open a new …

This paper reviews recent progress toward intersubband (ISB) devices based on III-nitride
quantum wells (QWs). First, we discuss the specific features of ISB active region design …