Performance of the illumination dependent electrical and photodiode characteristic of the Al/(GO: PTCDA)/p-Si structures
Ş Karataş, N Berk - Optical Materials, 2022 - Elsevier
In this our study, we fabricated an Al/p-Si metal semiconductor (MS) structure with
perylenetetra carboxylic dianhydride (PTCDA) and graphene oxide (GO) interface. The …
perylenetetra carboxylic dianhydride (PTCDA) and graphene oxide (GO) interface. The …
Modification of Schottky barrier height using an inorganic compound interface layer for various contact metals in the metal/p-Si device structure
Z Çaldıran - Journal of Alloys and Compounds, 2021 - Elsevier
In this study, lithium fluoride (LiF) was employed as an interface material by thermal
evaporation technique and its effect of on basic device parameters such as Schottky barrier …
evaporation technique and its effect of on basic device parameters such as Schottky barrier …
Analysis of temperature dependent current-voltage and frequency dependent capacitance-voltage characteristics of Au/CoO/p-Si/Al MIS diode
AR Deniz - Microelectronics Reliability, 2023 - Elsevier
In this study, the production and electrical characterization of Schottky circuit elements of
Au/CoO/p-Si/Al (MIS) structure were investigated. Diode parameters such as the ideality …
Au/CoO/p-Si/Al (MIS) structure were investigated. Diode parameters such as the ideality …
The structural, electrical, and photoelectrical properties of Al/Cu2CdSnS4 chalcogenide film/p-Si Schottky-type photodiode
Abstract The Cu2CdSnS4 (CCTS) film has been prepared using the hydrothermal approach
and deposited on the p-type silicon wafer by the use of the sol–gel technique. Then, the …
and deposited on the p-type silicon wafer by the use of the sol–gel technique. Then, the …
Ruthenium (III)–pyridine complex: Synthesis, characterization, barrier diode and photodiode applications in Al/Ru-Py/p-Si/Al sandwich device structure
A Yeşildağ - Chemical Papers, 2021 - Springer
Abstract Ruthenium (III)–pyridine (Ru-Py) complex has been synthesized and characterized
by NMR, IR, UV–Vis, fluorescence spectroscopy and HRMS. The crystal structure of the Ru …
by NMR, IR, UV–Vis, fluorescence spectroscopy and HRMS. The crystal structure of the Ru …
Analysis of the temperature dependent electrical parameters of the heterojunction obtained with Au nanoparticles decorated perovskite strontium titanate nanocubes
Strontium titanate (STO) is one of the important members of the perovskite family and has a
wide range of applications in optoelectronics. In this study, the rectifying properties of the …
wide range of applications in optoelectronics. In this study, the rectifying properties of the …
Improved barrier parameters and working stability of Au/p-GO/n-lnP/Au–Ge Schottky barrier diode with GO interlayer showing resistive switching effect
A Baltakesmez - Vacuum, 2019 - Elsevier
In this study, Au/p-GO/n-lnP/Au–Ge device structure for possible micro-and opto-electronic
applications has been investigated. Firstly, the graphene oxide (GO) interlayer has been …
applications has been investigated. Firstly, the graphene oxide (GO) interlayer has been …
Interface application of NiPt alloy nanoparticles decorated rGO nanocomposite to eliminate of contact problem between metal and inorganic/organic semiconductor
In this study, synthesis of monodisperse NiPt alloy NPs, preparation of rGO, decoration of the
NPs onto the rGO and interface application of the NiPt/rGO nanocomposite material were …
NPs onto the rGO and interface application of the NiPt/rGO nanocomposite material were …
The effects of temperature and frequency changes on the electrical characteristics of hot-injected Cu2MnSnS4 chalcogenide-based heterojunction
Cu 2 MnSnS 4 chalcogenide was obtained with the help of hot-injection technique and used
as an interfacial thin layer to examine its behavior under varying temperature and frequency …
as an interfacial thin layer to examine its behavior under varying temperature and frequency …
Optical, morphological, structural and photo-electrical properties of Ni-phthalocyanine/n-Ge heterojunction for optoelectronic applications
Abstract Ni-phthalocyanine (NiPc)/n-Ge heterojunction was realized with vacuum-deposited
NiPc thin interlayer. Optical absorption properties of the NiPc layer on glass substrate reveal …
NiPc thin interlayer. Optical absorption properties of the NiPc layer on glass substrate reveal …