SiGe channel technology: Superior reliability toward ultrathin EOT devices—Part I: NBTI
We report extensive experimental results of the negative bias temperature instability (NBTI)
reliability of SiGe channel pMOSFETs as a function of the main gate-stack parameters. The …
reliability of SiGe channel pMOSFETs as a function of the main gate-stack parameters. The …
High-Mobility CVD-Grown Ge/Strained Ge0.9Sn0.1/Ge Quantum-Well pMOSFETs on Si by Optimizing Ge Cap Thickness
YS Huang, YJ Tsou, CH Huang… - … on Electron Devices, 2017 - ieeexplore.ieee.org
The high peak mobility of 509 cm 2/V· s of the chemical vapor deposition-grown GeSn
pMOSFETs is obtained using 1-nm Ge cap. The Ge cap on GeSn can reduce the scattering …
pMOSFETs is obtained using 1-nm Ge cap. The Ge cap on GeSn can reduce the scattering …
Superior NBTI reliability of SiGe channel pMOSFETs: Replacement gate, FinFETs, and impact of body bias
In this paper we demonstrate superior NBTI reliability of SiGe pFETs with ultra-thin EOT in a
Replacement Metal Gate (RMG) process flow, and in a SiGe channel bulk pFinFET …
Replacement Metal Gate (RMG) process flow, and in a SiGe channel bulk pFinFET …
Negative bias-temperature instabilities and low-frequency noise in Ge FinFETs
Negative bias-temperature instabilities and low-frequency noise are investigated in strained
Ge MOS FinFETs with SiO textsubscript 2/HfO textsubscript 2 gate dielectrics. The extracted …
Ge MOS FinFETs with SiO textsubscript 2/HfO textsubscript 2 gate dielectrics. The extracted …
Strained GeSn p-Channel Metal–Oxide–Semiconductor Field-Effect Transistors With In Situ Si2H6 Surface Passivation: Impact of Sn Composition
We report a study about the impact of Sn composition on the performance of strained
germanium-tin (GeSn) pMOSFETs. GeSn pMOSFETs with Sn compositions of 0.027, 0.040 …
germanium-tin (GeSn) pMOSFETs. GeSn pMOSFETs with Sn compositions of 0.027, 0.040 …
6Å EOT Si0.45Ge0.55 pMOSFET with optimized reliability (VDD=1V): Meeting the NBTI lifetime target at ultra-thin EOT
6Å EOT Si 0.45 Ge 0.55 pFETs with 10 year lifetime at operating conditions (V DD= 1V) are
demonstrated. Ultra-thin EOT is achieved by interfacial layer (IL) scavenging. Negative Bias …
demonstrated. Ultra-thin EOT is achieved by interfacial layer (IL) scavenging. Negative Bias …
Characterization of Edge Fringing Effect on the – Responses From Depletion to Deep Depletion of MOS(p) Capacitors With Ultrathin Oxide and High- Dielectric
The edge fringing effect (EFE) on the capacitance-voltage (CV) responses from depletion to
deep depletion (DD) of p-substrate metal-oxide-semiconductor capacitors with ultrathin …
deep depletion (DD) of p-substrate metal-oxide-semiconductor capacitors with ultrathin …
Heavy-Ion and Laser Induced Charge Collection in SiGe Channel
EX Zhang, IK Samsel, NC Hooten… - … on Nuclear Science, 2014 - ieeexplore.ieee.org
Heavy-ion and two-photon-absorption (TPA) experiments have been performed on ultra-thin
implant-free quantum well SiGe channel pMOSFETs. Both the single-event-transient pulse …
implant-free quantum well SiGe channel pMOSFETs. Both the single-event-transient pulse …
NBTI Reliability of SiGe and Ge Channel pMOSFETs With Dielectric Stack
Due to a significantly reduced negative-bias temperature instability (NBTI),(Si) Ge channel
pMOSFETs are shown to offer sufficient reliability at ultrathin equivalent oxide thickness. The …
pMOSFETs are shown to offer sufficient reliability at ultrathin equivalent oxide thickness. The …
SiGe channel technology: Superior reliability toward ultra-thin EOT devices—Part II: Time-dependent variability in nanoscaled devices and other reliability issues
The time-dependent variability of nanoscaled Si 0.45 Ge 0.55 pFETs with varying
thicknesses of the Si passivation layer is studied. Single charge/discharge events of gate …
thicknesses of the Si passivation layer is studied. Single charge/discharge events of gate …