New requirements on post-accident monitoring systems in nuclear power plants pose fresh
challenges for electronic system designers and nuclear power plant personnel, in particular …

Although not manufactured to be used under X-ray photons, the commercial bipolar junction
transistor (BJT) is an electronic device that can be used as an ionizing radiation sensor. In …

We observe an anomalous early recovery behavior of base currents in silicon PNP
transistors irradiated by 60Co γ-rays at a dose rate below 1 mrad (Si)/s, which, however …

This paper describes the ATHENA platform, an energy tuning assembly, which was
developed to spectrally shape the National Ignition Facility (NIF) deuterium–tritium fusion …

Drift bipolar junction transistors (BJTs), characterized by a graded doping profile in the base
region, are susceptible to the recombination in both the base and emitter-base depletion …

The 28 nm CMOS technology was selected as a promising candidate to upgrade electronics
of particle detectors at CERN. Despite the robustness of this node to ultra-high levels of total …

The metal-oxide-silicon (MOS)-controlled thyristor (MCT) has been characterized by MOS-
gating, high-current-rise rate, and high blocking capabilities. The anode-short MCT (AS …

The quantification of ionizing energy deposition and non-ionizing energy deposition plays a
critical role in precision neutron dosimetry and in the separation of the displacement …

Abstract Radiation effects of 20 MeV Br on bipolar transistors are investigated in this work. A
distinct different bias dependences are found for damage factors (DF) of forward and reverse …

The accumulated radiation effects of preirradiation from different radiation sources on single-
event burnout (SEB) of silicon carbide metal-oxide-semiconductor field-effect transistors …