Electrical isolation of the billion or so active components in each integrated device is
achieved using shallow trench isolation (STI) which requires chemical mechanical …

Understanding polishing mechanisms in water-lubricated environments has an important
guiding value for surface engineering of precision devices. This work reveals the chemical …

The semiconductor industry is the backbone of exponentially growing digitization. Countries
from the east and the west both are investing significantly to accelerate this growth …

A highly pure, small particle-sized and high surface area nano silica powder was prepared
from rice husk using alkali extraction, followed by an acid precipitation method. The …

Abstract Ce 3+ in CeO 2, rather than Ce 4+, is believed to provide assistance to the breaking
up of Sisingle bondO bond during chemical mechanical polishing (CMP) of silica. In the …

This paper investigates the effects of oxidizer concentration, pH and slurry flow rate on the
material removal rate (MRR) in chemo-mechanical polishing (CMP) of Si (100) wafers. The …

ReaxFF reactive molecular dynamics simulations are employed to study the process of the
silica abrasive particle sliding on the Si (1 0 0) substrate in the aqueous H 2 O 2 in order to …

Abstract Cerium oxide (CeO 2-x) nanoparticles were synthesized using a simple one-step
method known as the pulsed plasma in liquid (PPL). XRD analysis showed the production of …

Silica nanoparticles have been prepared through dissolution–precipitation process from rice
straw ash (RSA) for different electronic applications. The dissolution of silica from RSA was …

Chemical mechanical polishing (CMP) is the most effective technology for the global and
local planarization of metal surfaces. In this study, an environment-friendly and highly …