One‐dimensional metal‐oxide nanostructures: recent developments in synthesis, characterization, and applications

RS Devan, RA Patil, JH Lin… - Advanced Functional …, 2012 - Wiley Online Library
Abstract 1D metal‐oxide nanostructures have attracted much attention because metal
oxides are the most fascinating functional materials. The 1D morphologies can easily …

ZnO nanostructures: growth, properties and applications

AB Djurišić, X Chen, YH Leung, AMC Ng - Journal of Materials …, 2012 - pubs.rsc.org
ZnO is a material which is of great interest for a variety of applications due to its unique
properties and the availability of a variety of growth methods resulting in a number of …

Recent advances in ZnO-based light-emitting diodes

YS Choi, JW Kang, DK Hwang… - IEEE Transactions on …, 2009 - ieeexplore.ieee.org
ZnO has attracted considerable attention for optical device applications because of several
potential advantages over GaN, such as commercial availability of bulk single crystals and a …

ZnO nanowire lasers

D Vanmaekelbergh, LK Van Vugt - Nanoscale, 2011 - pubs.rsc.org
The pathway towards the realization of optical solid-state lasers was gradual and slow. After
Einstein's paper on absorption and stimulated emission of light in 1917 it took until 1960 for …

A short review on properties and applications of zinc oxide based thin films and devices: ZnO as a promising material for applications in electronics, optoelectronics …

S Vyas - Johnson Matthey Technology Review, 2020 - ingentaconnect.com
Zinc oxide has emerged as an attractive material for various applications in electronics,
optoelectronics, biomedical and sensing. The large excitonic binding energy of 60 meV at …

Ultralow-threshold laser realized in zinc oxide

H Zhu, CX Shan, B Yao, BH Li, JY Zhang, ZZ Zhang… - 2009 - ir.ciomp.ac.cn
摘要 Lasing action is realized in a ZnO/GaN heterojunction by employing a MgO interlayer.
The MgO layer can confine electrons in the ZnO layer, while holes can pass through the …

Wavelength‐emission tuning of ZnO nanowire‐based light‐emitting diodes by Cu doping: experimental and computational insights

O Lupan, T Pauporté, T Le Bahers… - Advanced Functional …, 2011 - Wiley Online Library
The band‐gap engineering of doped ZnO nanowires is of the utmost importance for tunable
light‐emitting‐diode (LED) applications. A combined experimental and density‐functional …

Growth of homoepitaxial ZnO film on ZnO nanorods and light emitting diode applications

SH Park, SH Kim, SW Han - Nanotechnology, 2007 - iopscience.iop.org
Vertically aligned ZnO nanorod arrays with a diameter of 40–150 nm were fabricated on Al 2
O 3 substrates with and without GaN interlayers, and consequently covered with a ZnO film …

p-GaN/n-ZnO heterojunction nanowires: optoelectronic properties and the role of interface polarity

F Schuster, B Laumer, RR Zamani, C Magen… - Acs Nano, 2014 - ACS Publications
In this work, simulations of the electronic band structure of a p-GaN/n-ZnO heterointerface
are presented. In contrast to homojunctions, an additional energy barrier due to the type-II …

Fabrication methods and luminescent properties of ZnO materials for light-emitting diodes

CT Lee - Materials, 2010 - mdpi.com
Zinc oxide (ZnO) is a potential candidate material for optoelectronic applications, especially
for blue to ultraviolet light emitting devices, due to its fundamental advantages, such as …