Stability analysis of 6T CNTFET SRAM cell for single and multiple CNTs
M Elangovan, K Gunavathi - 2018 4th International Conference …, 2018 - ieeexplore.ieee.org
Carbon Nano Tube Field Effect Transistor (CNTFET) is a best futuristic device for nano scale
range VLSI design than MOSFETs. This is due to the favourable physical properties of …
range VLSI design than MOSFETs. This is due to the favourable physical properties of …
Performance Analysis of Thickness Dependency of Control Coefficients of CNTFET
MS Farhan, S Ameen, MF Monsur… - 2024 6th International …, 2024 - ieeexplore.ieee.org
For scaling Field-Effect Transistors (FET) into nanometers, carbon nanotube (CNT) is a
possible contender. CNTFETs' performance is highly impacted by the length of the CNT and …
possible contender. CNTFETs' performance is highly impacted by the length of the CNT and …
CNTFET-based Data Independent Power Efficient and Robust 8T SRAM Cell
A new carbon nano-tube field-effect transistors (CNTFETs) based Power Efficient and
Robust 8T (PER-8T) SRAM cell is proposed to reduce sub-threshold leakage currents, data …
Robust 8T (PER-8T) SRAM cell is proposed to reduce sub-threshold leakage currents, data …
[PDF][PDF] Modelling of drain current of MOSFET transistor in terms of gate oxide thickness
M Pourgholam, BA Ganji - Majlesi Journal of Telecommunication …, 2016 - mjtd.isfahan.iau.ir
Study on effects of changing the oxide thickness, can give us a view of the aspects of
MOSFET, in field of design of the transistor elements. Changing the oxide thickness affects …
MOSFET, in field of design of the transistor elements. Changing the oxide thickness affects …
The gate and drain control coefficients effect on CNTFET performance under different temperature
SA Imam, N Kalam, S Abdhullah - … International Conference on …, 2015 - ieeexplore.ieee.org
This paper deals with different temperature effects to analyses the behaviour of carbon
nanotube field effect transistors (CNTFETs) under ballistic conditions and based on the …
nanotube field effect transistors (CNTFETs) under ballistic conditions and based on the …
First principles study on transport characteristics of SiCNT-based field effect transistor
S Choudhary, A Chauhan - International Journal of Electronics …, 2017 - Taylor & Francis
Simulation studies on silicon carbide nanotube (SiCNT)-based field-effect transistor (FET)
are reported in this paper. Two geometries of channel length 100 and 16 A∘ have been …
are reported in this paper. Two geometries of channel length 100 and 16 A∘ have been …
Performance Evaluation and Analysis of CNT for Strain Sensor applications
The growth of flexible nano-electronics demands the development of conductive nano
materials. The adaptive behavior of a nanomaterials can enhance the sensing performance …
materials. The adaptive behavior of a nanomaterials can enhance the sensing performance …