Double barrier structure of Mo/AlN/Mo/AlN/Mo multilayer and its resonant tunneling effect
ZA Lu, Z Zhao, Q Wan, JW Yu, D Ma - Vacuum, 2024 - Elsevier
We prepare a symmetrical double barrier structure of Mo/AlN/Mo/AlN/Mo by using the
reactive magnetron sputtering on a sapphire substrate and examine its resonant tunneling …
reactive magnetron sputtering on a sapphire substrate and examine its resonant tunneling …
In0.53Ga0.47As/AlAs Double-Barrier Resonant Tunnelling Diodes With High-Power Performance in the Low-Terahertz Band
We report about an In 0.53 Ga 0.47 As/AlAs doublebarrier resonant tunnelling diode (RTD)
epitaxial structure that features high-power capabilities at low-terahertz frequencies (∼ 100 …
epitaxial structure that features high-power capabilities at low-terahertz frequencies (∼ 100 …
A High-Power InP Resonant Tunnelling Diode Heterostructure for 300-GHz Oscillator Sources
A high-power double-barrier resonant tunnelling diode (RTD) epitaxial structure in InP
technology is reported. The heterostructure exhibits moderate available current density …
technology is reported. The heterostructure exhibits moderate available current density …
[引用][C] Tunelamiento resonante en heteroestructuras semiconductoras de doble barrera
BV Díaz, J Nolberto