Background: The insatiable need for low-power and high-performance integrated circuit (IC)
results in the development of alternative options for metal oxide semiconductor field effect …

The VLSI industry has grown a lot for several decades. The Packing density of integrated
circuits has been increased without compromising the functionality. Scaling of …

The self-heating effect (SHE) is one of the major challenges of ultra-scaled devices such as
stacked nanosheet field effect transistor (SNSHFET) for sub 7 nm technology. The DC …

Stress/strain engineering techniques are employed to boost the performance of Gate-all-
around (GAA) vertically stacked nanosheet field-effect transistors (NSFETs) for 7 nm …

Emerging machine-learning (ML) methodology has been overcoming the challenging task of
analyzing the process variation effect of nanoscale devices using 3-D stochastic device …

Process variations (PV), including global variation (GV) and local variation (LV), have
become one of the major issues in advanced technologies, which is crucial for circuit …

Transition metal dichalcogenides are nowadays appealing to researchers for their excellent
electronic properties. Vertical stacked nanosheet FET (NSFET) based on MoS 2 are …

Conventional techniques for extracting physics‐based model parameters are inherently
slow processes and often yield less accurate model parameters because of the inflexibility of …

The characteristic comparison of the capacitor-less DRAMs in the structural form variation is
investigated. Based on the simulation results of the three basic structures, such as circular …

This paper compares different types of Gate All Around (GAA) FET structures using TCAD
simulation, including Lateral Nanosheet, Lateral Nanowire, Vertical Nanosheet, and Vertical …