Electrode configurations for semiconductor devices
Y Dora, Y Wu - US Patent 8,716,141, 2014 - Google Patents
Abstract A III-N semiconductor device can include an electrode-defining layer having a
thickness on a surface of a III-N material structure. The electrode-defining layer has a recess …
thickness on a surface of a III-N material structure. The electrode-defining layer has a recess …
Enhancement-mode III-nitride devices
RK Lal - US Patent 9,087,718, 2015 - Google Patents
7,795,642 B2 9/2010 Suh et al. JP 2008-199771 8, 2008 7,851,825 B2 12/2010 Suh et al.
JP 2010-087076 4/2010 7,875,907 B2 1/2011 Honea et al. JP 2010-539712 12/2010 …
JP 2010-087076 4/2010 7,875,907 B2 1/2011 Honea et al. JP 2010-539712 12/2010 …
GaN dual field plate device with single field plate metal
JA Teplik, BM Green - US Patent 9,024,324, 2015 - Google Patents
The present invention is directed in general to integrated circuit devices and methods for
manufacturing same. In one aspect, the present invention relates to the manufacture and …
manufacturing same. In one aspect, the present invention relates to the manufacture and …
GaN structures
DM Kinzer - US Patent 9,960,154, 2018 - Google Patents
(57) ABSTRACT A semiconductor device is disclosed. The device includes a substrate
including Gan, a two dimensional electron gas (2DEG) inducing layer on the substrate, and …
including Gan, a two dimensional electron gas (2DEG) inducing layer on the substrate, and …
Half bridge driver circuits
DM Kinzer, S Sharma, J Zhang - US Patent 9,960,764, 2018 - Google Patents
GaN-based half bridge power conversion circuits employ control, support and logic functions
that are monolithically integrated on the same devices as the power transistors. In some …
that are monolithically integrated on the same devices as the power transistors. In some …
High breakdown voltage III-N depletion mode MOS capacitors
BACKGROUND The mobile computing (eg, Smartphone and tablet) mar kets benefit from
smaller component form factors and lower power consumption. Because current platform …
smaller component form factors and lower power consumption. Because current platform …
Electrodes for semiconductor devices and methods of forming the same
S Chowdhury, U Mishra, Y Dora - US Patent 9,171,730, 2015 - Google Patents
Abstract A III-N semiconductor HEMT device includes an electrode-defining layer on a III-N
material structure. The electrode-defining layer has a recess with a first sidewall proximal to …
material structure. The electrode-defining layer has a recess with a first sidewall proximal to …
High electron mobility transistor circuit
Y Takemae, T Hosoda, T Sato - US Patent 8,541,815, 2013 - Google Patents
BACKGROUND A GaN-HEMT (high electron mobility transistor) is prom ising as a high
power Switching device from high breakdown electric field intensity and high mobility of …
power Switching device from high breakdown electric field intensity and high mobility of …
III-Nitride insulating-gate transistors with passivation
R Chu, MY Chen, X Chen, KS Boutros - US Patent 9,337,332, 2016 - Google Patents
A field-effect transistor (FET) includes a plurality of semiconductor layers, a source electrode
and a drain electrode contacting one of the semiconductor layers, a first dielectric layer on a …
and a drain electrode contacting one of the semiconductor layers, a first dielectric layer on a …
Half bridge power conversion circuits using GaN devices
DM Kinzer, S Sharma, JJ Zhang - US Patent 9,859,732, 2018 - Google Patents
GaN-based half bridge power conversion circuits employ control, support and logic functions
that are monolithically integrated on the same devices as the power transistors. In some …
that are monolithically integrated on the same devices as the power transistors. In some …