High frequency and high efficiency operation is one of the premier interests in the signal and
energy conversion applications. The wide bandgap GaN based devices possess superior …

This article reports the Au-free GaN power integration platform and a complete integration
scheme from devices to functional subcircuits and to application-oriented GaN converter ICs …

This paper presents the design of a gate driver, monolithically integrated with power p-gate
Gallium Nitride High Electron Mobility Transistor (p-GaN HEMT). It is implemented by an …

The introduction of the three‐state switching cell (3SSC) and the multi‐state switching cell
(MSSC) has led to the proposal of several converter topologies, where prominent …

Reducing parasitic coupling components can improve switching performance in electric
circuits. A two-stage gate driver and power Gallium Nitride High Electron Mobility Transistors …

This paper describes the development of a viable platform for the design of full GaN (Gallium
Nitride) monolithic integrated circuits for power conversion applications. The Normally-on …

This article reports the design and the first experimental demonstration of the monolithically
integrated over-current protection (OCP) circuit in GaN power converters. The design criteria …

In this study, we developed an analytic model to design a trench metal–insulator–
semiconductor (MIS) field plate (FP) structure for the edge termination of a vertical GaN PN …

氮化镓(GaN) 是第三代半导体的典型代表, 受到学术界和产业界的广泛关注,
正在成为未来超越摩尔定律所依靠的重要技术之一. 对于射频(RF) GaN 技术 …

This chapter presents the GaN-based different devices for 5G applications. It includes the
design and performance optimization of devices for the above mentioned application. The …