Quantum engineering of transistors based on 2D materials heterostructures

G Iannaccone, F Bonaccorso, L Colombo… - Nature …, 2018 - nature.com
Quantum engineering entails atom-by-atom design and fabrication of electronic devices.
This innovative technology that unifies materials science and device engineering has been …

Molecular chemistry approaches for tuning the properties of two-dimensional transition metal dichalcogenides

S Bertolazzi, M Gobbi, Y Zhao, C Backes… - Chemical Society …, 2018 - pubs.rsc.org
Two-dimensional (2D) semiconductors, such as ultrathin layers of transition metal
dichalcogenides (TMDs), offer a unique combination of electronic, optical and mechanical …

Transferred via contacts as a platform for ideal two-dimensional transistors

Y Jung, MS Choi, A Nipane, A Borah, B Kim… - Nature …, 2019 - nature.com
Two-dimensional semiconductors have a number of valuable properties that could be used
to create novel electronic devices. However, creating 2D devices with good contacts and …

Oxide-mediated recovery of field-effect mobility in plasma-treated MoS2

J Jadwiszczak, C O'Callaghan, Y Zhou, DS Fox… - Science …, 2018 - science.org
Precise tunability of electronic properties of two-dimensional (2D) nanomaterials is a key
goal of current research in this field of materials science. Chemical modification of layered …

Study of Ion Velocity Effect on the Band Gap of CVD-Grown Few-Layer MoS2

M Khan, R Meena, DK Avasthi, A Tripathi - ACS omega, 2023 - ACS Publications
The present work reports on a simple chemical vapor deposition (CVD) technique that
employs alkali halide (NaCl) to synthesize high-quality few-layer MoS2 by reducing growth …

Direct growth of doping controlled monolayer WSe 2 by selenium-phosphorus substitution

WT Kang, IM Lee, SJ Yun, YI Song, K Kim, DH Kim… - Nanoscale, 2018 - pubs.rsc.org
Although many studies have been carried out on the doping of transition metal
dichalcogenides (TMDCs), introducing controllable amounts of dopants into a TMD lattice is …

Plasma treatment of ultrathin layered semiconductors for electronic device applications

J Jadwiszczak, DJ Kelly, J Guo, Y Zhou… - ACS Applied Electronic …, 2021 - ACS Publications
The incorporation of two-dimensional (2D) semiconductors into future electronic devices will
require electronic-grade, large-scale, and cost-effective means of doping and chemical …

Origin of phonon-limited mobility in two-dimensional metal dichalcogenides

H Chang, H Wang, KK Song, M Zhong… - Journal of Physics …, 2021 - iopscience.iop.org
Metal dichalcogenides are novel two-dimensional (2D) semiconductors after the discovery
of graphene. In this article, phonon-limited mobility for six kinds of 2D semiconductors with …

Tungsten dichalcogenide WS 2x Se 2− 2x films via single source precursor low-pressure CVD and their (thermo-) electric properties

V Sethi, D Runacres, V Greenacre, L Shao… - Journal of Materials …, 2023 - pubs.rsc.org
Semiconducting transition metal dichalcogenides have gained increased interest as
potential alternatives to graphene due to their tunable electronic bandgaps. In this study, we …

Formation of MoO 3 and WO 3 nanoscrolls from MoS 2 and WS 2 with atmospheric air plasma

XS Chu, DO Li, AA Green, QH Wang - Journal of Materials Chemistry …, 2017 - pubs.rsc.org
Nanostructured transition metal oxides (TMOs) have intriguing electrochemical and physical
properties that make them useful in a variety of electrochemical applications. Here, we report …